• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.1-4
• /
• 1998

In this paper, we have studied a variation of I-V characteristics, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_$bd/) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SiO$_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and Q$\_$bd/ performance over the NO film and SiO$_2$, while maintaining a similar electric field dependence compared with NO layer.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.5
• /
• pp.729-736
• /
• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.343-346
• /
• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.785-787
• /
• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• The Korean Journal of Ceramics
• /
• v.6 no.3
• /
• pp.250-257
• /
• 2000

The feasibility of synthesizing SiC-AlN solid solution by field-activated combustion synthesis was demonstrated. At lower fields of 8-16.5V/cm, composites of AlN-rich and SiC-rich phases were synthesized, but at fields of 25-30 V/cm, the product was a 2H structure solid solution. Combustion synthesis of the solid solution by nitridation of aluminum with silicon carbide under a nitrogen gas pressure of 4-8 MPa was also investigated. The maximum combustion temperature and wave propagation velocity were found to be influenced by the electric field in the field-activated combustion synthesis, and by the green density and nitrogen pressure in the combustion nitridation. In both cases the formation of solid solutions is complete within seconds, considerably faster than in conventional methods which require hours.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.296-299
• /
• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Journal of Powder Materials
• /
• v.15 no.6
• /
• pp.489-495
• /
• 2008

Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

• Journal of the Korean Ceramic Society
• /
• v.26 no.2
• /
• pp.179-186
• /
• 1989

The preparation of the fine BN powders by ammonia-nitridation of ammonia-decaborane derivate was attempted at temperature between 300 to 150$0^{\circ}C$. The formation mechanism of BN was examined and the resulant BN powder was characterized by means of IR, XRD, SEM and PSA method. In the nitridation below 80$0^{\circ}C$ bonding materials were identified with mainly BH and NH but above 80$0^{\circ}C$ with BN by IR spectra and X-ray patterns. Crystalite size, lattice constant and particle size distribution of hexagonal BN prepared at 1, 50$0^{\circ}C$ were La=470$\AA$, Lc=180$\AA$, a=2.5062$\pm$1$\AA$, c=6.8285$\pm$2$\AA$ and 2.0-5.4${\mu}{\textrm}{m}$, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.575-578
• /
• 2002

In this paper, we discuss carrier trapping model and trap characteristics of nitrided oxide thin film. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitted with experimental data in order to determine trap parameter of nitride oxide and O2 annealed nitrided oxide. As a results of curve fitting, the heavy nitridation of oxide introduces three kinds of traps with capture cross section $\sigma$n1=1.48$\times$10$^{-17}$ $\textrm{cm}^2$, $\sigma$n2=1.51$\times$10$^{-19}$ $\textrm{cm}^2$, $\sigma$p=1.53$\times$10$^{-18}$ $\textrm{cm}^2$ and corresponding trap densities Nnl=2.66$\times$10$^{12}$ Cm$^{-2}$ , Nn2=1.32$\times$10$^{12}$ Cm$^{-2}$ , Np=8.35$\times$10$^{12}$ Cm$^{-2}$ .

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2008.11a
• /
• pp.23.1-23.1
• /
• 2008