• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.5
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• pp.695-701
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• 1999

Thermal sprayed Ni-Cr alloy coating on the carbon steel was carried out erosion-corrosion test and electrochemical corrosion test in the marine environment. THe erosion-corrosion behavior and electrochemical corrosion characteristics of substrate(SS400) and thermal sprayed Ni-Cr coating was investigated, The erosion-corrosion control efficiency of Ni-Cr coating to substrate was also estimated quantitatively.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.91-96
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• 2002

Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

• Progress in Superconductivity
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• v.6 no.1
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• pp.64-68
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• 2004

We fabricated cube-textured Ni and Ni-W alloy substrates for coated conductors and characterized the effects of W addition on microstructure, mechanical strength, and magnetic properties of the substrate. Pure Ni and Ni-(2, 3, 5at.%)W alloys were prepared by plasma arc melting, heavily cold rolled and then annealed at various temperatures of $600-1300^{\circ}C$. The texture was evaluated by pole-figure and orientation distribution function (ODF) analysis. Mechanical properties were investigated by micro Vickers hardness and tension test. Ferromagnetism of the substrate was measured by physical property measurement system (PPMS). It was observed that Ni-W substrates had sharp cube texture, and the full-width at half-maximums (FWHMs) of in-plane texture was $^{\circ}$-5.57$4.42^{\circ}$, which is better than that of pure Ni substrate. In addition cube texture of Ni-W substrates was retained at higher temperature up to $1300^{\circ}C$. Microstructural observation showed that the Ni-W substrates had fine grain size and higher mechanical properties than the pure Ni substrate. These improvements are probably due to strengthening mechanisms such as solid solution hardening and/or grain size strengthening. PPMS analysis showed that addition of W effectively reduced saturation magnetization in applied magnetic field and Curie temperature.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.293-297
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• 1993

Exchange coupled $NiFe/TbCo/Sio_{2}$ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured. TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a Theo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1000-1004
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• 2006

In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.355-358
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• 2000

Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400$^{\circ}C$. MR measurement was carried out as a function of angle $\theta$, between external field and current direction. MR ratio increased with increasing substrate temperature, also, max. MR ratio was observed in samples deposited at 300$^{\circ}C$. With increasing upto 400$^{\circ}C$, MR ratio was rapidly decreased in the case of thinner NiFe films. In non-field deposited NiFe films, both angle $\theta$=0, 90。, there was no significant change in MR curves. However, MR curves of in-situ field deposited NiFe films were different in both angles $\theta$=0 and 90。

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.55-58
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• 2003

We fabricated the textured Ni substrate and evaluated the effects of processing variables on microstructural evolution and texture transformation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(P/M) and plasma arc melting(PAM) The texture of the substrate was characterized by pole-figure and surface condition was evaluated by atomic force microscopy. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 800~120$0^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$~10$^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the FWHMs of in-plane texture was 9$^{\circ}$~13$^{\circ}$ at the temperature range. In addition, twin texture, (221)＜221＞, was formed as the temperature increased further. The grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.45-45
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• 1994