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http://dx.doi.org/10.4313/JKEM.2006.19.11.1000

Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET  

Jung, Soon-Yen (충남대학교 전자공학과)
Oh, Soon-Young (충남대학교 전자공학과)
Lee, Won-Jae (충남대학교 전자공학과)
Zhang, Ying-Ying (충남대학교 전자공학과)
Zhong, Zhun (충남대학교 전자공학과)
Li, Shi-Guang (충남대학교 전자공학과)
Kim, Yeong-Cheol (한국기술교육대학교 신소재공학과)
Lee, Ga-Won (충남대학교 전자공학과)
Wang, Jin-Suk (충남대학교 전자공학과)
Lee, Hi-Deok (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.11, 2006 , pp. 1000-1004 More about this Journal
Abstract
In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.
Keywords
SOI; Nickel silicide; Thermal stability; Dopant; Nano-scale CMOSFET;
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