Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
![]() |
Jung, Soon-Yen
(충남대학교 전자공학과)
Oh, Soon-Young (충남대학교 전자공학과) Lee, Won-Jae (충남대학교 전자공학과) Zhang, Ying-Ying (충남대학교 전자공학과) Zhong, Zhun (충남대학교 전자공학과) Li, Shi-Guang (충남대학교 전자공학과) Kim, Yeong-Cheol (한국기술교육대학교 신소재공학과) Lee, Ga-Won (충남대학교 전자공학과) Wang, Jin-Suk (충남대학교 전자공학과) Lee, Hi-Deok (충남대학교 전자공학과) |
1 | M. S. Bae, H. H. Ji, H. J. Lee, S. Y. Oh, J. G. Yun, B. F. Huang, J. Suk Wang, and H. D. Lee. 'Dependence on dopant of Ni-silicide for nano CMOS device', The Institute of Electronics Engineers of Korea, Vol. 40, No. 11 p. 803, 2003 |
2 | L. R. Sheng, L. S. hung, and J. W. Mayer, 'Redistribttion of dopant arsenic during silicide formation', J. Appl. Phys., Vol. 58, No. 4, p. 1505, 1985 |
3 | K. Goto, 'A comparative study of leakage mechanism of Co and Ni-salicide processes', IEEE 36th Reliability Phy., p. 363, 1998 |
4 | C. C. Wang, C. J Lin, and M. C. Chen, 'Formation of NiSi-silicided p+n shallow junctions using implant-through-silicide and low-tem perature furnace annealing', Journal of the Electrochemical Society, Vol. 150, No. 9, p. G557, 2003 DOI ScienceOn |
5 |
L. T. Su, M. J. Sherony, H. Hu, J. E. Chung, and Dimitri A. Antoniadis, Fellow, 'Optimization of series resistance in Sub-0.2 |
6 | J. G. Yun, S. Y. Oh, B. F. Huang, H. H. Ji, Y. G. Kim, S. H. Park, H. S. Lee, D. B. Kim, U. S. Kim, H. S. Cha, S. B. Hu, J. G. Lee, S. K. Baek, H. S. Hwang, and H. D. Lee, 'Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma irrimersion ion implatation and Ni-Co-TiN Tri-Layer', IEE Electron Device Letters, Vol. 26, No.2, p. 90, 2005 DOI ScienceOn |
7 | T. C. Hsiao, P. Liu, and J. C. S. Woo, 'An advanced Ge preamorphization salicide technology for ultra-thin-film SOI CMOS devices', IEEE Electron Device Letters, Vol. 18, No.7, p. 309, 1997 DOI ScienceOn |
8 |
J. S. Maa, B. Ulrich, S. T. Hsu, and G. Stecker, 'Selective deposition of |
![]() |