Magnetoresistance changes of sputtered NiFe thin films with deposition temperatures

NiFe 박막의 증착온도에 따른 MR 특성

Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400$^{\circ}C$. MR measurement was carried out as a function of angle $\theta$, between external field and current direction. MR ratio increased with increasing substrate temperature, also, max. MR ratio was observed in samples deposited at 300$^{\circ}C$. With increasing upto 400$^{\circ}C$, MR ratio was rapidly decreased in the case of thinner NiFe films. In non-field deposited NiFe films, both angle $\theta$=0, 90。, there was no significant change in MR curves. However, MR curves of in-situ field deposited NiFe films were different in both angles $\theta$=0 and 90。