• Title/Summary/Keyword: Ni-Fe thin film

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A Study of Shielding Property of Magnetic Field for the Film Impregnated with Soft Magnetic Powder (연자성 합금분말을 함침시킨 필름의 자계 차폐 특성 연구)

  • Park, Jong-Hyun;Ra, Keuk-Hwan;Kang, Eun-Kyun;Kim, Jin-Woo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.1
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    • pp.211-218
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    • 2014
  • In this paper the magnetic field properties of the soft magnetic alloys (Fe-Si-Cr and Fe-Ni-Cr) are studied in advance for the development of electro-magnetic shielding films, which could be used in the IT Devices (NFC, mobile phone, computer, etc.).As a result each of the selected soft magnetic alloy melts of the corresponding compositions is water-dispersed into the disk-shaped grains, which are soaked in polymer resin, and of which two types of thin film of thickness 0.1mm and 1mm are made by passing through the heating calendar roller. And the magnetic permeability and the shielding effectiveness of the polymer films containing the soft magnetic alloy grains are measured over the whole frequency bands from the low frequency to 10GHz. Before the experiments of the soft magnetic alloy, a special equation is proposed to estimate the permeability of the alloy, and the equation is verified with the pre-published data by MATLAB, and from which the most optimal compositions can be decided. And the SE(Shielding Effectiveness) of the polymer films containing the soft magnetic alloy grains is simulated by the HFSS.

Vector Network Analyzer Ferromagnetic Resonance Study of Py Thin Films (Vector Network Analyzer를 이용한 Py 박막의 강자성공명연구)

  • Shin, Yong-Hwack;Ha, Seung-Seok;Kim, Duck-Ho;You, Chun-Yeol
    • Journal of the Korean Magnetics Society
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    • v.20 no.1
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    • pp.18-23
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    • 2010
  • Ferromagnetic resonance (FMR) measurement is an important experimental technique for the study of magnetic dynamics. We designed and set up the vector network analyzer ferromagnetic resonance (VNA-FMR) measurement system with home made coplanar waveguides (CPW). We examined 10-, 20-, 40-nm thick Py thin films to test the performance of the VNA-FMR measurement system. We measured S-parameter (transmission/reflection coefficient) of Py thin films on a CPW. Resonance frequency is investigated from 2.5 to 7 GHz for a field range from 0 to 490 Oe. The VNA-FMR data shows the resonance frequency increment when the external magnetic field increases. We also investigated Gilbert damping constant of Py thin film using resonance frequency (${\omega}_r$) and linewidth ($\Delta\omega$). After investigating dependence of thickness, we find that an decrease in S-parameter intensity as Py thin film thickness decreases. And the FMR results show that the effective saturation magnetization, $M_{eff}$, increase from 7.205($\pm$0.013) kOe to 7.840($\pm$0.014) kOe, while the film thickness varies from 10 to 40 nm.

Property of Nickel Silicides with 10 nm-thick Ni/Amorphous Silicon Layers using Low Temperature Process (10 nm-Ni 층과 비정질 실리콘층으로 제조된 저온공정 나노급 니켈실리사이드의 물성 변화)

  • Choi, Youngyoun;Park, Jongsung;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.47 no.5
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    • pp.322-329
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    • 2009
  • 60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Property of Nickel Silicides with Hydrogenated Amorphous Silicon Thickness Prepared by Low Temperature Process (나노급 수소화된 비정질 실리콘층 두께에 따른 저온형성 니켈실리사이드의 물성 연구)

  • Kim, Jongryul;Choi, Youngyoun;Park, Jongsung;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.46 no.11
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    • pp.762-769
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    • 2008
  • Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

Optimization of Growth Gases for the Low-temperature Synthesis of Carbon Nanotubes (탄소나노튜브의 저온성장을 위한 합성가스의 최적화 연구)

  • Kim, Young-Rae;Jeon, Hong-Jun;Lee, Han-Sung;Goak, Jeung-Choon;Hwang, Ho-Soo;Kong, Byung-Yun;Lee, Nae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.4
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    • pp.342-349
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    • 2009
  • This study investigated the growth characteristics of carbon nanotubes (CNTs) by changing a period of annealing time and a $C_{2}H_{2}/H_2$ flow ratio at temperature as low as $450^{\circ}C$ with inductively coupled plasma chemical vapor deposition. The 1-nm-thick Fe-Ni-Co alloy thin film served as a catalyst layer for the growth of CNTs, which was thermally evaporated on the 15-nm-thick Al underlayer deposited on the 50-nm-thick Ti diffusion barrier. The annealing at low temperature of $450^{\circ}C$ brought about almost no granulation of the catalyst layer, and the CNT growth was not affected by a period of annealing time. A study of changing the flow rate of $C_{2}H_{2}$ and $H_2$ showed that as the ratio of the $C_{2}H_{2}$ flow rate to the $H_2$ flow rate was lowered, the CNTs were grown to be longer With further decreasing the flow ratio, the length of CNTs reached the maximum and then became shorter. Under the optimized gas flow rates, we successfully synthesized CNTs with a uniform length over a 4-inch Si wafer at $450^{\circ}C$.

Effects of Sulfuric Acid Concentration and Alloying Elements on the Corrosion Resistance of Cu-bearing low Alloy Steels

  • Kim, Ki Tae;Kim, Young Sik
    • Corrosion Science and Technology
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    • v.17 no.4
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    • pp.154-165
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    • 2018
  • During the process of sulfur dioxide removal, flue gas desulfurization equipment provides a serious internal corrosion environment in creating sulfuric acid dew point corrosion. Therefore, the utilities must use the excellent corrosion resistance of steel desulfurization facilities in the atmosphere. Until now, the trend in developing anti-sulfuric acid steels was essentially the addition of Cu, in order to improve the corrosion resistance. The experimental alloy used in this study is Fe-0.03C-1.0Mn-0.3Si-0.15Ni-0.31Cu alloys to which Ru, Zn and Ta were added. In order to investigate the effect of $H_2SO_4$ concentration and the alloying elements, chemical and electrochemical corrosion tests were performed. In a low concentration of $H_2SO_4$ solution, the major factor affecting the corrosion rate of low alloy steels was the exchange current density for $H^+/H_2$ reaction, while in a high concentration of $H_2SO_4$ solution, the major factors were the thin and dense passive film and resulting passivation behavior. The alloying elements reducing the exchange current density in low concentration of $H_2SO_4$, and the alloying elements decreasing the passive current density in high concentration of $H_2SO_4$, together play an important role in determining the corrosion rate of Cu-bearing low alloy steels in a wide range of $H_2SO_4$ solution.

Realization of sensitivity symmetry of Hall Sensor using Trench Structure and Ferromagnetic Thin Films (트랜치 구조 및 강자성체 박막을 이용한 홀 센서의 감도 대칭성 구현)

  • Park, Jae-Sung;Choi, Chae-Hyoung
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.45 no.4
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    • pp.29-34
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    • 2008
  • Generally, for conventional 3-D Hall sensor it is general that the sensitivity for $B_z$ is about 1/10 compared with those for $B_x$ or $B_y$. Therefore, in this work, we proposed 3-D Hall sensor with new structures. We have increased the sensitivity about 6 times to form the trench using anisotropic etching. And we have increased the sensitivity for the $B_z$ by 80 % compared with those of $B_x$ and $B_y$ using deposition of the ferromagnetic thin films on the bottom surface of the wafer to concentrate the magnetic fluxes. Sensitivities of the fabricated sensor with Ni/Fe film for $B_x,\;B_y$, and $B_z$ were measured as 361mV/T, 335mV/T, and 286mV/T, respectively. It has also showed sine wave of Hall voltages over a $360^{\circ}$ rotation. A packaged sensing part was $1.2{\times}1.2mm^2$. The measured linearity of the sensor was within ${\pm}3%$ of error. Resolution of the fabricated sensor was measured by $1{\times}10^{-5}T$.

The Study of Near-field Scanning Microwave Microscope for the Nondestructive Detection System (비파괴 측정을 위한 근접장 마이크로파 현미경 연구)

  • Kim, Joo-Young;Kim, Song-Hui;Yoo, Hyun-Jun;Yang, Jong-Il;Yoo, Hyung-Keun;Yu, Kyong-Son;Kim, Seung-Wan;Lee, Kie-Jin
    • Journal of the Korean Society for Nondestructive Testing
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    • v.24 no.5
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    • pp.508-517
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    • 2004
  • We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.