• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.62-66
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• 2008

We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.

• Current Applied Physics
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• 제18권12호
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• The Korean Journal of Ceramics
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• 제2권3호
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• pp.162-166
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• 1996

The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1032-1038
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• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.61-66
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• 2001

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

• Progress in Superconductivity
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• 제7권1호
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• pp.64-68
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• 2005

We fabricated Ni-based alloy substrates for YBCO coated conductor using powder metallurgy. Tungsten and copper were selected as alloy elements due to their mutual solubility to the base element of nickel. The alloying elements were mixed with nickel using ball milling and dried in air. The powder mixtures were packed in a rubber mold, cold isostatic pressed 200 MPa and made into rods. The compacted rods were sintered at $1150^{\circ}C$ for 6 hours for densification. It was confirmed by neutron diffraction experiment that W and Cu atoms made complete solid solution with Ni. Lattice constant of nickel alloy increased by $0.004{\AA}$ for 1at. $\%$ W in Ni-W alloy, $0.0006{\AA}$ for 1 at. $\%$ Cu in Ni-W-Cu alloy.

• 한국표면공학회지
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• 제47권5호
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• pp.215-220
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• 2014

Electrodeposition behaviors of Pd-Ni alloys were investigated from the polarization curves in a solution containing ethylenediamine as complexing agent. The microstructure and hardness of electrodeposited Pd-Ni alloys were also characterized. Codeposition of Pd-Ni alloys was successfully performed in the wide current density ranging from 2 to $5000A{\cdot}m^{-2}$ because the deposition potential of Pd became close to that of Ni in the ethylenediamine-contained solution. It was also found from X-ray diffraction patterns that the solid solution between Pd and Ni was formed with variation of the composition of alloys. The measured hardness of Pd-Ni alloys increased with increasing the contents of Ni due to solid solution strengthening and grain refinement. The electrodeposited Pd-Ni alloys also exhibited a crack free smooth surface morphology from the SEM observation.

• 대한전자공학회논문지SD
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• 제40권12호
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• pp.1-9
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• 2003

본 논문에서는 cobalt interlayer와 TiN capping을 적용한 Ni-Silicide 구조를 제안하여 100 ㎜ CMOS 소자에 적용하고 소자 특성 연구를 하였다. Ni-Silicide의 취약한 열 안정성을 개선하기 위해 열 안정성이 우수한 Cobalt interlayer이용하여 silicide의 열화됨을 개선하였고 또한 silicide 계면의 uniformity를 향상하기 위해 TiN capping을 동시에 적용하였다. 100 ㎚ CMOS 소자에 제안한 Co/Ni/TiN 구조를 적용하여 700℃, 30분에서의 열처리 시에도 silicide의 낮은 면저항과 낮은 접합 누설 전류가 유지되었으며 100 ㎚이하 소자의 특성 변화도 거의 없음을 확인하였다. 따라서 제안한 Co/Ni/TiN 구조가 NiSi의 열 안정성을 개선시킴으로써 100 ㎚ 이하의 Nano CNOS 소자에 매우 적합한 Ni-Silicide 특성을 확보하였다.

• Journal of Magnetics
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• 제13권2호
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• pp.65-69
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• 2008

The magneto impedance (MI) behaviors of patterned $Co_{30}Fe_{34}Ni_{36}$ microwire were investigated with respect to its shape variation. After preparing $Co_{30}Fe_{34}Ni_{36}$ microwires using electrodeposition and photolithography methods, impedance measurements were conducted to compare the MI ratios of the devices with different aspect ratios. As a result, the anisotropy field and transverse permeability were found to be strongly affected by the aspect ratio of the device. The external field value at the maximum impedance and maximum sensitivity of the device was found to increase with increasing device width, which was attributed to the increased transverse anisotropy with decreasing aspect ratio. While an increase in the thickness also contributed to an increase in the MI ratio, a variation in the thickness not only increased the anisotropic field, but the variation in the MI ratio was as also affected by the skin effect. Conversely, the MI ratios of the present devices were hardly affected by variations in the length. Considering the typical aspect ratios of our devices, it was expected that the length effect would emerge when the aspect ratio was reduced to less than 10. Nevertheless, our results show that for the practical application of MI devices, the MI characteristics can be optimized by tailoring the aspect ratio of the devices.

• Nuclear Engineering and Technology
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• 제39권3호
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• pp.231-236
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• 2007

Due to the occasional occurrences of stress corrosion cracking(SCC) in steam generator tubing(Alloy 600), degraded tubes are removed from service by plugging or are repaired for re-use. Since electrodeposition inside a tube does not entail parent tube deformation, residual stress in the tube can be minimized. In this work, tube restoration via electrodeposition inside a steam generator tubing was performed after developing the following: an anode probe to be installed inside a tube, a degreasing condition to remove dirt and grease, an activation condition for surface oxide elimination, a tightly adhered strike layer forming condition between the electro forming layer and the Alloy 600 tube, and the condition for an electroforming layer. The reliability of the electrodeposited material, with a variation of material properties, was evaluated as a function of the electrodeposit position in the vertical direction of a tube using the developed anode. It has been noted that the variation of the material properties along the electrodeposit length was acceptable in a process margin. To improve the reliability of a material property, the causes of the variation occurrence were presumed, and an attempt to minimize the variation has been made. A Ni alloy electrodeposition process is suggested as a primary water stress corrosion cracking(PWSCC) mitigation method for various components, including steam generator tubes. The Ni alloy electrodeposit formed inside a tube by using the installed assembly shows proper material properties as well as an excellent SCC resistance.