Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Effects of NiO Addition in $WO_3$-based Gas Sensors Prepared by Thick film Process

후막법으로 제조된 $WO_3$ 기체센서의 NiO 첨가효과

  • 노효섭 (조선대학교 재료공학과) ;
  • 배인수 (조선대학교 재료공학과) ;
  • 정훈택 (조선대학교 재료공학과) ;
  • 이우선 (조선대학교 재료공학과) ;
  • 홍광준 (조선대학교 재료공학과) ;
  • 이현규 (조선대학교 재료공학과) ;
  • 박진성 (조선대학교 재료공학과)
  • Published : 2001.05.11
Download PDF
⟨ Previous Next ⟩

Abstract

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

Keywords