• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.62-66
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• 2008

We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.162-166
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• 1996

The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1032-1038
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• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.61-66
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• 2001

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

• Progress in Superconductivity
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• v.7 no.1
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• pp.64-68
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• 2005

We fabricated Ni-based alloy substrates for YBCO coated conductor using powder metallurgy. Tungsten and copper were selected as alloy elements due to their mutual solubility to the base element of nickel. The alloying elements were mixed with nickel using ball milling and dried in air. The powder mixtures were packed in a rubber mold, cold isostatic pressed 200 MPa and made into rods. The compacted rods were sintered at $1150^{\circ}C$ for 6 hours for densification. It was confirmed by neutron diffraction experiment that W and Cu atoms made complete solid solution with Ni. Lattice constant of nickel alloy increased by $0.004{\AA}$ for 1at. $\%$ W in Ni-W alloy, $0.0006{\AA}$ for 1 at. $\%$ Cu in Ni-W-Cu alloy.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.215-220
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• 2014

Electrodeposition behaviors of Pd-Ni alloys were investigated from the polarization curves in a solution containing ethylenediamine as complexing agent. The microstructure and hardness of electrodeposited Pd-Ni alloys were also characterized. Codeposition of Pd-Ni alloys was successfully performed in the wide current density ranging from 2 to $5000A{\cdot}m^{-2}$ because the deposition potential of Pd became close to that of Ni in the ethylenediamine-contained solution. It was also found from X-ray diffraction patterns that the solid solution between Pd and Ni was formed with variation of the composition of alloys. The measured hardness of Pd-Ni alloys increased with increasing the contents of Ni due to solid solution strengthening and grain refinement. The electrodeposited Pd-Ni alloys also exhibited a crack free smooth surface morphology from the SEM observation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

• Journal of Magnetics
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• v.13 no.2
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• pp.65-69
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• 2008

The magneto impedance (MI) behaviors of patterned $Co_{30}Fe_{34}Ni_{36}$ microwire were investigated with respect to its shape variation. After preparing $Co_{30}Fe_{34}Ni_{36}$ microwires using electrodeposition and photolithography methods, impedance measurements were conducted to compare the MI ratios of the devices with different aspect ratios. As a result, the anisotropy field and transverse permeability were found to be strongly affected by the aspect ratio of the device. The external field value at the maximum impedance and maximum sensitivity of the device was found to increase with increasing device width, which was attributed to the increased transverse anisotropy with decreasing aspect ratio. While an increase in the thickness also contributed to an increase in the MI ratio, a variation in the thickness not only increased the anisotropic field, but the variation in the MI ratio was as also affected by the skin effect. Conversely, the MI ratios of the present devices were hardly affected by variations in the length. Considering the typical aspect ratios of our devices, it was expected that the length effect would emerge when the aspect ratio was reduced to less than 10. Nevertheless, our results show that for the practical application of MI devices, the MI characteristics can be optimized by tailoring the aspect ratio of the devices.

• Nuclear Engineering and Technology
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• v.39 no.3
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• pp.231-236
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• 2007

Due to the occasional occurrences of stress corrosion cracking(SCC) in steam generator tubing(Alloy 600), degraded tubes are removed from service by plugging or are repaired for re-use. Since electrodeposition inside a tube does not entail parent tube deformation, residual stress in the tube can be minimized. In this work, tube restoration via electrodeposition inside a steam generator tubing was performed after developing the following: an anode probe to be installed inside a tube, a degreasing condition to remove dirt and grease, an activation condition for surface oxide elimination, a tightly adhered strike layer forming condition between the electro forming layer and the Alloy 600 tube, and the condition for an electroforming layer. The reliability of the electrodeposited material, with a variation of material properties, was evaluated as a function of the electrodeposit position in the vertical direction of a tube using the developed anode. It has been noted that the variation of the material properties along the electrodeposit length was acceptable in a process margin. To improve the reliability of a material property, the causes of the variation occurrence were presumed, and an attempt to minimize the variation has been made. A Ni alloy electrodeposition process is suggested as a primary water stress corrosion cracking(PWSCC) mitigation method for various components, including steam generator tubes. The Ni alloy electrodeposit formed inside a tube by using the installed assembly shows proper material properties as well as an excellent SCC resistance.