• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.129-135
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• 1997

Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.281-286
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• 2010

Thickness effects on the structural and optical properties of ZnO thin films fabricated by spin coating method have been carried out. With increase in the thickness of the ZnO thin films, the width and density of striation shape are increased. The ZnO thin film with thickness of 450 nm has a smooth surface morphology. For the ZnO thin film with a smooth surface, orientation factor ${\alpha}_{(002)}$ is sharply increased and FWHM of (002) diffraction peak is decreased compared to the ZnO thin films with a striation shape surface. Thickness and surface morphology of the ZnO thin films hardly affect the NBE peak position. However, the DLE peak position is blue-shifted as the surface morphology is changed from striation to smooth surface. The PL intensity ratio of the NBE to DLE is increased and the FWHM of NBE peak is decreased as the thickness of the ZnO thin films is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.839-843
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• 2011

ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by ${\times}$ sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at $800^{\circ}C$, $1,100^{\circ}C$. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at $1,100^{\circ}C$ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at $1,100^{\circ}C$ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 ${\mu}m$ with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.

• Korean Journal of Agricultural and Forest Meteorology
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• v.23 no.1
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• pp.15-33
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• 2021

In this study, the possibility of discriminating Fire blight (FB) infection tested using the hyperspectral imagery. The reflectance of healthy and infected leaves and branches was acquired with 5 nm of full width at high maximum (FWHM) and then it was standardized to 10 nm, 25 nm, 50 nm, and 80 nm of FWHM. The standardized samples were divided into training and test sets at ratios of 7:3, 5:5 and 3:7 to find the optimal bands of FWHM by the decision tree analysis. Classification accuracy was evaluated using overall accuracy (OA) and kappa coefficient (KC). The hyperspectral reflectance of infected leaves and branches was significantly lower than those of healthy green, red-edge (RE) and near infrared (NIR) regions. The bands selected for the first node were generally 750 and 800 nm; these were used to identify the infection of leaves and branches, respectively. The accuracy of the classifier was higher in the 7:3 ratio. Four bands with 50 nm of FWHM (450, 650, 750, and 950 nm) might be reasonable because the difference in the recalculated accuracy between 8 bands with 10 nm of FWHM (440, 580, 640, 660, 680, 710, 730, and 740 nm) and 4 bands was only 1.8% for OA and 4.1% for KC, respectively. Finally, adding two bands (550 nm and 800 nm with 25 nm of FWHM) in four bands with 50 nm of FWHM have been proposed to improve the usability of multispectral image sensors with performing various roles in agriculture as well as detecting FB with other combinations of spectral bands.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Korean Journal of Remote Sensing
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• v.35 no.2
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• pp.251-263
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• 2019

Sentinel-2 Multi Spectral Instrument(MSI) launched by the European Space Agency (ESA) offered high spatial resolution optical products, enhanced temporal revisit of five days, and 13 spectral bands in the visible, near infrared and shortwave infrared wavelengths similar to Landsat mission. Landsat satellite imagery has been applied to various previous studies, but Sentinel-2 optical satellite imagery has not been widely used. Currently, for global coverage, Sentinel-2 products are systematically processed and distributed to Level-1C (L1C) products which contain the Top-of-Atmosphere (TOA) reflectance. Furthermore, ESA plans a systematic global production of Level-2A(L2A) product including the atmospheric corrected Bottom-of-Atmosphere (BOA) reflectance considered the aerosol optical thickness and the water vapor content. Therefore, the Sentinel-2 L2A products are expected to enhance the reliability of image quality for overall coverage in the Sentinel-2 mission with enhanced spatial,spectral, and temporal resolution. The purpose of this work is a quantitative comparison Sentinel-2 L2A products and fully simulated image to evaluate the applicability of the Sentinel-2 dataset in cultivated land growing various kinds of crops in Korea. Reference image of Sentinel-2 L2A data was simulated by airborne hyperspectral data acquired from AISA Fenix sensor. The simulation imagery was compared with the reflectance of L1C TOA and that of L2A BOA data. The result of quantitative comparison shows that, for the atmospherically corrected L2A reflectance, the decrease in RMSE and the increase in correlation coefficient were found at the visible band and vegetation indices to be significant.