• 한국생산제조학회지
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• 제22권1호
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• pp.168-172
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• 2013

In 3D wafer-stacking technology, one of the major issues is wafer warpage. Especially, The important reason of warpage has been known due to CTE(Coefficient of Thermal Expansion) mismatch between materials. It was too hard to choose how to make the FE model for blanket structured wafer level 3D packaging, because the thickness of each layer in wafer level 3D packaging was too small (micro meter or nano meter scale) comparing with diameter of wafer (6 or 8 inches). In this study, the FE model using the shell element was selected and simulated by the ANSYS WorkBench to investigate effects of the CTE on the warpage. To verify the FE model, it was compared by experimental results.

• 한국생산제조학회지
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• 제26권1호
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• pp.1-5
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• 2017

This study investigated the mechanical tearing of a cell membrane using a nanostructured alumina filter for easy and quick mechanical cell disruption. Nanostructured alumina filters were prepared by a multi-step aluminum anodizing process and nanopore etching process. Six different types of nanostructures were formed on the surface of the nanoporous alumina filters to compare the mechanical cell disruption characteristics according to the shape of the nanostructure. The prepared alumina filter was assembled in a commercial filter holder, and then, NIH3T3 fibroblast cells in a buffer solution were passed through the nanostructured alumina filter at a constant pressure. By measuring the concentration of proteins and DNA, the characteristics of mechanical cell disruption of the nanostructured alumina filter were investigated.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1186-1189
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• 2005

Focused Ion Beam machining is an attractive approach to produce nano-scale 3D structures. However, like other beam-based manufacturing processes, the redeposition of the sputtered material during the machining deteriorates the geometric accuracy of ion beam machining. In this research a new approach to reduce the geometric error in FIB machining is introduced. The observed redeposition phenomena have been compared with existing theoretical model. Although the redeposition effect has good repeatability the prediction of exact amount of geometric error in ion beam machining is difficult. Therefore, proposed method utilizes process control approach. Developed algorithm measures the redeposition amount after every production cycle and modifies next process plan. The method has been implemented to a real FIB machine and the experimental results demonstrated considerable improvement of five micrometer-sized pocket machining.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.645-648
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• 2005

Microscopy has enabled the development of many advanced technologies, and higher level microscopic techniques are required according to the increase of research in nano-technology and bio-technology fields. Therefore, in many applications, we need to measure the dimension of micro-scale parts accurately, not just to observe their shapes. To establish the meter-traceability in microscopy, gratings have been widely used as a magnification standard. KRISS provides the certification service of magnification standards using an optical diffractometer and a metrological AFM (MAFM). They are based on different measurement principles, and so can give complementary information for each other. In this paper, we describe the configuration of each system and measurement procedures to certificate grating pitch values of magnification standards. Several measurement results are presented, and the discussion about them are also given. Using the optical diffractometer, we can calibrate a grating specimen with uncertainty of less than 50 pm. The MAFM can measure a grating specimen of down to 100 nm pitch value, and the calibrated values usually have uncertainty less than 500 pm.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1741-1744
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• 2005

The electron beam machining provides very high resolution up to nanometer scale, hence the E-Beam writing technology is rapidly growing in MEMS and nano-engineering areas. For E-Beam machining, $2^{nd}$ electron detector is required to see a machined sample at the stage. The $2^{nd}$ electron detector is composed of scintillator and photomultiplier with signal amplifier and high voltage power supplier. Since a photomultiplier tube is an extremely high-sensitivity photodetector, the signal light level to be detected is very low and therefore particular care must be exercised in shielding external light. In this paper, the design methodology of $2^{nd}$ electron detector and the image noise removal method are introduced.

• 한국재료학회지
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• 제14권9호
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• pp.619-626
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• 2004

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.9-9
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• 2011

The transfer of nano-science accomplishments into technology is severely hindered by a lack of understanding of barriers to nanoscale manufacturing. The NSF Center for High-rate Nanomanufacturing (CHN) is developing tools and processes to conduct fast massive directed assembly of nanoscale elements by controlling the forces required to assemble, detach, and transfer nanoelements at high rates and over large areas. The center has developed templates with nanofeatures to direct the assembly of carbon nanotubes and nanoparticles (down to 10 nm) into nanoscale trenches in a short time (in seconds) and over a large area (measured in inches). The center has demonstrated that nanotemplates can be used to pattern conducting polymers and that the patterned polymer can be transferred onto a second polymer substrate. Recently, a fast and highly scalable process for fabricating interconnects from CMOS and other types of interconnects has been developed using metallic nanoparticles. The particles are precisely assembled into the vias from the suspension and then fused in a room temperature process creating nanoscale interconnect. The center has many applications where the technology has been demonstrated. For example, the nonvolatile memory switches using (SWNTs) or molecules assembled on a wafer level. A new biosensor chip (0.02 $mm^2$) capable of detecting multiple biomarkers simultaneously and can be in vitro and in vivo with a detection limit that's 200 times lower than current technology. The center has developed the fundamental science and engineering platform necessary to manufacture a wide array of applications ranging from electronics, energy, and materials to biotechnology.

• 폴리머
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• 제26권3호
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• pp.381-388
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• 2002

폴리우레탄을 이용한 나노 복합재료의 열적 기계적 성질, 모폴로지, 그리고 기체 투과 정도를 유기화 점토의 함량에 따라 조사 후 비교하였다. 유기화 점토는 헥사데실아민-몬모릴로나이트($C_{16}$-MMT)를 사용하였으며, 매트릭스 고분자인 폴리우레탄에 대해 1-4 wt%로 각각 분산시키면서 물성을 조사하였다. 유기화 점토가 일정한 wt%에서 일부는 뭉쳤지만 대부분은 매트릭스 고분자에 고루 분산됨을 전자현미경으로부터 알 수 있었고, 열적 성질 및 기계적 성질은 분산도에 따라 증가함을 알 수 있었다. 기체 투과도는 유기화 점토 양의 증가에 따라 현저히 감소함을 보여주었다. 본 연구로부터, 소량의 유기화 점토 (<5 wt%)를 분산시킨 나노 복합재료는 순수한 폴리우레탄 보다 열적, 기계적 성질 및 기체 투과 방지에 좋은 효과가 있음을 알았다.

• 한국정보통신학회논문지
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• 제6권7호
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• pp.1074-1078
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• 2002

본 논문에서는 main gate(MG)와 side gate(SG)를 갖는 double gate(DG) MOSFET를 디자인하고 TCAD를 이용하여 시뮬레이션하였다. MG와 SG의 길이(LMG, LSG)는 각각 50nm, 70nm로 하였으며, MG와 SG의 전압(VMG, VSG)이 각각 1.5V, 3.0V일 때 드레인전압(VD)을 0에서 1.5V까지 변화시키면서 핀치오프특성을 조사하였다. LMG가 아주 작음에도 불구하고, 핀치-오프특성이 아주 좋게 나타났다. 이것은 DG MOSFET의 VMG가 게이트를 제어하는 역할을 잘 수행하여 나노 구조에서 유용한 구조임을 알 수 있었다.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.719-724
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• 2003

본 논문은 halo doping profile을 갖는 나노구조 LDD MOSFET의 문턱전압에 대하여 연구하였다. 소자의 크기는 일반화된 스켈링 이론을 사용하여 100nm 에서 40m까지 스켈링하였다. Van Dort Quantum Correction Model(QM) 모델을 정전계 스켈링 이론과 정전압 스켈링 이론에 적용하여 문턱전압을 조사하였으며, gate oxide 두께의 변화 따른 direct tunneling current를 조사하였다. 결과적으로 게이트 길이가 감소됨에 따라 문턱전압이 정전계 스켈링에서는 감소하고 정전압 스켈링에서는 증가함을 알았고 direct tunneling current는 gate oxide 두께가 감소함에 따라 증가됨을 알았다. 또한 채널 길이의 감소에 따른 MOSFET의 문턱전압에 대한 roll-off특성을 최소화하기 위하여 일반화된 스켈링에서 $\alpha$값은 거의 1 이여야 함을 알았다.