• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.334-338
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• 2012

Electrical isolation of Ag nanowire, which is one of the candidates as electrode for display devices, on polymer with femtosecond pulse laser has been investigated. Line patterning to Ag nanowire with various pulse energy and scan speed were experimented. Duo to the results of the line patterning experiment, we fabricated the isolated squares and measured electrical resistance. The profile of the selectively ablated area was analyzed with AFM(Atomic Force Microscope). The width of the patterned line was $1.8\;{\mu}m$ and the depth was $1.6\;{\mu}m$. We demonstrated electrical isolation of the Ag nanowire using femtosecond laser by evaluating the electrical resistance of the sample between isolated and opened area.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1489-1492
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• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• Transactions of the KSME C: Technology and Education
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• v.3 no.3
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• pp.217-223
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• 2015

The patterning of microbead in microfluidics channel is a practical technique for application in bio and medical areas. An approach is described for a direct patterning of magnetically active microbeads in microfluidic devices without inner structure. Local magnet arrangements - flat arrangement and stack arrangement - contacting same poles or opposite poles of magnet were utilized for generating trapping magnetic fields. The arrangement of magnets contacting same poles generated isolated patterns by repelling of magnetic field. The flat arrangement of vertically reverse magnet arrays shaped trapping patterns repelling magnetic field line between same poles. Spatially, the stack compositions of magnet arrangements allow diverse isolated trapped patterns of magnetic particles. Trapped magnetic particles in fluidic channels were stable on the $18m{\ell}/hr$ flow conditions and magnetic force of 1.08 mT in the all experiments. This experimental study suggests the simple and versatile methods to pattern magnetic particles, and has potential of wide application to bio and medical area.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1340_1341
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• 2009

In this report, high-resolution metal electrode patterning is demonstrated by using selective surface treatment and dip casting for low-cost printed electronic applications. On hydrophobic octadecyltrichlorosilane treated $SiO_2$ surface, deep UV irradiation was performed through a patterned quartz photomask to selectively control the surface energy of the $SiO_2$ layer. The deep UV irradiated region becomes hydrophilic and by dipping into Ag nano-ink, Ag patterns were formed on the surface. Using this patterning technique, line patterns and dot arrays having less than $10{\mu}m$ pitch were fabricated.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.385-385
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• 2011

Ion beam Sputtering (IBS)를 이용한 물질 표면의 pattern 형성은 물리적 변수 조절로 손쉽게 nano structure의 크기와 형태를 조절할 수 있어 관심을 받고 있다. 본 연구발표에서는 massless Dirac Fermion behavior로 인한 highly carrier mobility와 같은 특성으로 인해 차세대 device material로 각광받고 있는 Graphene의 layered compound (층상구조) 형태인 HOPG (Highly Ordered Pyrolysis Graphite)에 IBS (Ion beam Sputtering)를 이용해 nano structure가 형성 가능함을 보이고 그 특징에 대해 소개하려 한다. HOPG(0001)를 Sputter 했을 때, 표면에 잘 정렬된 nano ripple pattern이 형성 가능함을 확인하였으며 sputter하는 시간을 변화하면 약 10 nm에서 80 nm까지 wavelength를 조절할 수 있다. 또한 이전의 IBS를 이용한 연구들에서 확인할 수 있는 다른 물질의 곧게 뻗은 nano ripple과는 다르게 ripple의 끝에 nano swab이 생기는 것을 AFM (Atomic Force Microscope)으로 확인할 수 있었다. 이러한 Graphite에서만 나타나는 Sputter에 의한 표면의 변화의 원인을 규명하고자 Sputter가 지속됨에 따라 나타나는 mopology의 roughness와 wavelength의 시간에 따른 dynamic scaling behavior를 확인하였고 그 얼개를 알기 위해 simulation을 수행 하였다.

• Journal of Magnetics
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• v.12 no.1
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.62.1-62.1
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• 2011

현재 상용화된 LED 또는 태양전지 등의 투명전극(TCO, transparent couducting oxide)재료로 높은 전기전도도와 광투과도를 갖는 ITO (Indium Tin Oxide)가 많이 채택되고 있다. 그러나 이에 사용되는 Indium의 단가가 높다는 문제점이 있어 이를 대체하기 위한 물질의 연구가 많이 이루어지고 있다. 특히 Aluminum을 doping한 ZnO (AZO)는 우수한 전기적, 광학적 특성 등으로 인해 ITO를 대체할 차세대 TCO 물질로 각광받고 있다. 본 연구에서는 sol-gel법을 및 direct patterning법을 이용하여 moth-eye 패턴을 포함하는 AZO 박막을 제작하였다. AZO sol을 제작하기 위하여 2-methoxyethanol, zinc acetate dihydrate 및 doping source로 aluminum nitrate nonahydrate를 사용하였다. 또한 광추출 향상 효과를 갖는 moth-eye 구조의 master stamp를 Polydimethyl siloxane(PDMS)를 이용하여 역상 moth-eye 구조의 mold를 복제하였으며, 이 복제된 mold와 제작된 AZO sol을 이용한 direct patterning법을 통해 나노급 moth-eye 구조를 갖는 AZO 투명전극층을 형성하였다. 제작된 moth-eye 구조를 갖는 AZO 투명전극층의 전기적 특성 평가를 위해, 4-point probe 측정 및 Hall measurement를 시행하였으며, 광학적 특성을 확인하기 위하여 UV-Visable spectrometer를 이용하여 투과도를 측정하였다. 본 연구를 통해 현재 상용화된 광전자 소자에 사용되고 있는 ITO 투명전극을 대체할 차세대 투명전극으로써 AZO 박막의 가능성을 확인하였다.