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http://dx.doi.org/10.4283/JMAG.2007.12.1.012

Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices  

Nguyen Hoang Yen Thi (Nano Device Research Center, Korea Institute of Science and Technology)
Yi, Hyun-Jung (Nano Device Research Center, Korea Institute of Science and Technology)
Shin, Kyung-Ho (Nano Device Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of Magnetics / v.12, no.1, 2007 , pp. 12-16 More about this Journal
Abstract
Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.
Keywords
spin transfer; nano-scale junctions; spin valves; e-beam resist; subtractive process;
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