• 한국정밀공학회지
• /
• 제28권12호
• /
• pp.1419-1424
• /
• 2011

Nanoimprint lithography is a next generation lithography technology, which enables to fabricate nano to micron-scale patterns through simple and low cost process. Nanoimprint lithography has been applied in various industry fields such as light emitting diodes, solar cells and display. Functional patterns, including anti-reflection moth-eye pattern, photonic crystal pattern, fabricated by nanoimprint lithography are used to improve overall efficiency of devices in that fields. For these reasons, in this study, sub-micron-scaled functional patterns were directly fabricated on Si and glass substrates by thermal imprinting process using ZnO nano-particles dispersion resin. Through the thermal imprinting process, arrays of sub-micron-scaled pillar and hole patterns were successfully fabricated on the Si and glass substrates. And then, the topography, components and optical property of the imprinted ZnO nano-particles/resin patterns are characterized by Scanning Electron Microscope, Energy-dispersive X-ray spectroscopy and UV-vis spectrometer, respectively.

• 제어로봇시스템학회논문지
• /
• 제14권5호
• /
• pp.420-425
• /
• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
• /
• pp.18.1-18.1
• /
• 2008

• 한국표면공학회지
• /
• 제41권6호
• /
• pp.331-334
• /
• 2008

The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 추계학술대회 논문집
• /
• pp.665-666
• /
• 2006

• 대한기계학회논문집A
• /
• 제30권10호
• /
• pp.1314-1319
• /
• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 한국재료학회지
• /
• 제19권4호
• /
• pp.224-227
• /
• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• 한국인쇄학회지
• /
• 제29권3호
• /
• pp.17-30
• /
• 2011

The polarizer is an important optical element used in a variety of applications. Nano-wire grid polarizers in the form of sub-wavelength metallic gratings are an attractive alternative to conventional polarizers, because they provide high extinction ratio. This study has been carried out to fabrication of the 17inch area size nano-wire grid polarizer(NWGP) The master for NWGPs with a pitch of 200nm and the area size $730mm{\times}450mm$ were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the Roll to-Roll UV imprinting and was applied to flexible PET film. The results were a transmission of light (Tp) 46.7%, reflectance (Rs) 40.1% and Extinction ratio of above 16 for the visible light range.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
• /
• pp.1160-1163
• /
• 1999

In this study, we developed FE-tip lithography system that could apply to multi-tip system and did lithography using FE-tip. The software that control FE-tip lithography system, was proposed for acquiring more adaptive data to compensate the effect of fluctuation. We found that the fluctuation effect was reduced. The minimum line width was related to applied voltage and we observed a movement of Z-axis piezo stage to correct the error of this system. When FE current was 5nA, scanning speed was $3{\mu}m/sec$ and applied voltage was 200V, we made a line pattern which had minimum line width of 614 nm. If we reduce applied voltage to several decades and increase scanning speed to $20{\mu}m/sec$, it is possible to set the minimum line width of 100 nm. The proposed system can be easily applied to multi FE-tip lithography system.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.359-362
• /
• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist