• Title/Summary/Keyword: Nano-channel

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Fabrication and Characterization of $High-T_c$ Superconducting Single Channel Flux Flow Transistor using the Atomic Force Microscope TiO Cantilever Tip (원자힘 주사현미경 TiO 탐침을 이용한 고온 초전도 단일채널 자속 흐름 트랜지스터의 제작 및 특성 해석)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Lee, Jong-Hwa;Lee, Hae-Sung;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.101-104
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    • 2004
  • We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.

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Analysis of Threshold Voltage Roll-off for Ratio of Channel Length and Thickness in DGMOSFET (DGMOSFET에서 채널길이와 두께 비에 따른 문턱전압변화분석)

  • Jung, Hak-Kee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.765-767
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    • 2010
  • In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off has been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

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Powder Densification Using Equal Channel Angular Pressing (ECAP 공정을 이용한 분말의 치밀화)

  • Yoon Seung-Chae;Seo Min-Hong;Hong Sun-Ig;Kim Hyoung-Seop
    • Journal of Powder Materials
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    • v.13 no.2 s.55
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    • pp.124-128
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    • 2006
  • In recent years, equal channel angular pressing (ECAP) has been the subject of intensive study due to its capability of producing fully dense samples having a ultrafine grain size. In this paper, the ECAP process was applied to metallic powders in order to achieve both powder consolidation and grain refinement. In the ECAP process for solid and powder metals, knowledge of the internal stress, strain and strain rate distribution is fundamental to the determination of the optimum process conditions for a given material. The properties of the ECAP processed solid and powder materials are strongly dependent on the shear plastic deformation behavior during ECAP, which is controlled mainly by die geometry, material properties, and process conditions. In this study, we investigated the consolidation, plastic deformation and microstructure evolution behaviour of the powder compact during ECAP.

A Study on Flow Characteristics of Fountain-pen Nano-Lithography with Active Membrane Pumping (능동적 박막 펌핑에 의한 파운틴 펜 나노 리소그래피 유동 특성에 관한 연구)

  • Lee Jin-Hyoung;Lee Young-Kwan;Lee Sung-Kun;Lee Suk-Han;Kim Youn-Jea;Kim Hun-Mo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.8 s.251
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    • pp.722-730
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    • 2006
  • In this study, the flow characteristics of a FPN (Fountain Pen Nano-Lithography) using active membrane pumping are investigated. The FPN has integrated chamber, micro channel, and high capacity reservoir for continuous ink feed. The most important aspect in this probe provided control of fluid injection using active membrane pumping in chamber. The flow rates in channel by capillary force are theoretically analyzed, including the control of the mass flow rates by the deflection of the membrane. The above results are compared with the numerical simulations that calculated by commercial code, FLUENT. The velocity of the fluid in micro channel shows linear behaviors. And the mass flows are proportional to the second order function of the pumping pressure that is imposed to the membrane.

Analysis for Deformation and Fracture Behavior of Magnesium during Equal Channel Angular Pressing by the Finite Element Method (마그네슘의 등통로각압축 공정 시 변형 및 파괴 거동에 대한 유한요소해석)

  • Yoon, Seung Chae;Pham, Quang;Kim, Hyoung Seop
    • Korean Journal of Metals and Materials
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    • v.46 no.3
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    • pp.144-149
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    • 2008
  • Equal channel angular pressing (ECAP) has been studied intensively over the decade as a typical top-down process to produce ultrafine/nano structured materials. ECAP has successfully been applied for a processing method of severe plastic deformation to achieve grain refinement of magnesium and to enhance its low ductility. However, difficult-to-work materials such as magnesium and titanium alloys were susceptible to shear localization during ECAP, leading to surface cracking. The front pressure, developed by Australian researchers, can impose hydrostatic pressure and increase the strain level in the material, preventing the surface defect on workpiece. In the present study, we investigated the deformation and fracture behavior of pure magnesium using experimental and numerical methods. The finite element method with different ductile fracture models was employed to simulate plastic deformation and fracture behavior of the workpiece.

Fabrication of Printed Microfluidics Channel by using Thermal Roll-Imprinting

  • Yu, Jong-Su;Jo, Jeong-Dai;Yoon, Seong-Man;Kim, Hee-Yeoun;Kim, Dong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1472-1475
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    • 2009
  • The microfluidics channel were fabricated using thermal roll-imprinting process on plastic substrates. As rollimprinting surface is heated directly at $100^{\circ}C$ and printing process proceed 380/400 kgf pressure, we fabricated microfluidic patterns separated line of $40.04{\mu}m$, serpentine line of $113.89{\mu}m$ and depth of imprint pattern is $15.35{\mu}m$, it means to get fine pattern has more than 70% imprint rate in designed mask.

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Enhanced Inter-Symbol Interference Cancellation Scheme for Diffusion Based Molecular Communication using Maximum Likelihood Estimation

  • Raut, Prachi;Sarwade, Nisha
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.10 no.10
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    • pp.5035-5048
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    • 2016
  • Nano scale networks are futuristic networks deemed as enablers for the Internet of Nano Things, Body area nano networks, target tracking, anomaly/ abnormality detection at molecular level and neuronal therapy / drug delivery applications. Molecular communication is considered the most compatible communication technology for nano devices. However, connectivity in such networks is very low due to inter-symbol interference (ISI). Few research papers have addressed the issue of ISI mitigation in molecular communication. However, many of these methods are not adaptive to dynamic environmental conditions. This paper presents an enhancement over original Memory-1 ISI cancellation scheme using maximum likelihood estimation of a channel parameter (λ) to make it adaptable to variable channel conditions. Results of the Monte Carlo simulation show that, the connectivity (Pconn) improves by 28% for given simulation parameters and environmental conditions by using enhanced Memory-1 cancellation method. Moreover, this ISI mitigation method allows reduction in symbol time (Ts) up to 50 seconds i.e. an improvement of 75% is achieved.

The Electrical Properties of GaN Individual Nanorod Devices by Wet-etching of the Nanorod Surface and Annealing Treatment (표면 습식 식각 및 열처리에 따른 GaN 단일 나노로드 소자의 전기적 특성변화)

  • Ji, Hyun-Jin;Choi, Jae-Wan;Kim, Gyu-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.2
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    • pp.152-155
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    • 2011
  • Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.