• Advances in nano research
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• v.1 no.1
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• pp.13-27
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• 2013

Carbon nanotube characterized by additional inductive effect as compared with the traditional conductors like copper wires of the same size. Consequently, carbon nanotubes have high characteristic impedance and slow wave propagation in comparison with traditional conductors. Due to these characteristics, carbon nanotubes can be used as antenna. In view of this, we describe and review the present research progress on carbon nanotube antennas. We present different analysis models and results which are developed to investigate the characteristics of CNT antennas. Then we conclude by summarizing the characteristics of CNT antennas and specifying the operating frequency limit.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.147-150
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• 2014

Copper ink has been prepared by mixing copper(II) formate and 2-ethyl-1-hexylammonium bicarbonate (EHABC) to overcome some weak points such as aggregation and degradation of copper nano-type ink. Ink was coated on glass substrate and calcined at $110^{\circ}C$ to $150^{\circ}C$ to generate electrically conductive copper film under two different atmospheres such as nitrogen gas and gaseous mixture of formic acid and methanol. The lowest resistivity of $1.88{\mu}{\Omega}{\cdot}cm$ of copper film was obtained at $150^{\circ}C$ in gaseous formic acid condition. The long-term resistivity shows to increase from $1.88{\mu}{\Omega}{\cdot}cm$ to $2.61{\mu}{\Omega}{\cdot}cm$ after one month.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.62-71
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• 2002

An intergral C-V converter is proposed to solve the nonlinearity problem of capacitive pressure sensors. The integral C-V converter consists of a switched-capacitor integrator and a switched-capacitor differential amplifier. It converts the sensor capacitance change which is inversely proportional to an applied pressure into a linear voltage output. Various PSPICE simulations prove that the convertor has excellent characteristics, such as low nonlinearity less than 0.01%/FS and low sensitivity to parallel offset capacitance and parasitic capacitance for the displacement range of sensor diaphragm set to 0 ${\sim}$ 90% of the initial distance between the electrodes in the simulation. We also show that the offset compensation and the gain trimming are easily achieved with the integral C-V converter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.96-96
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• 2016

Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.115-120
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• 2008

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.77-85
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• 2009

We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.28-35
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• 2012

가정의 전자레인지, 병원의 X-ray 영상, 그리고 군의 레이더 장비에 이르기까지 우리 주변에는 이미 오래 전부터 전자빔을 이용한 장비들이 무수히 많이 쓰이고 있다. 이런 장비들에는 대부분 고온으로 가열해서 전자를 방출시키는 열전자원이 보편적으로 사용되고 있으나 높은 소비전력 그리고 빠른 스위칭의 어려움 등의 단점 또한 존재한다. 이 한계를 극복하기 위해 전계방출원 기술, 특히 나노미터 크기의 나노전자원 기술의 연구가 오래 전부터 꾸준히 이어지고 있다. 본고를 통해 디지털 시대에 부합하는 나노전자원의 기본 개념 및 응용 분야 그리고 ETRI에서 개발 중인 나노전자원 응용 기술들을 소개한다.