유연한 기판상의 유기 트랜지스터의 절연 표면층 상태 변화에 의한 전기적 특성 향상

Changes of dielectric surface state In organic TFTs on flexible substrate

  • 김종무 (한국과학기술연구원, 디스플레이.나노 소자 연구실) ;
  • 이주원 (한국과학기술연구원, 디스플레이.나노 소자 연구실) ;
  • 김영민 (한국과학기술연구원, 디스플레이.나노 소자 연구실) ;
  • 박정수 (한국과학기술연구원, 디스플레이.나노 소자 연구실) ;
  • 김재경 (한국과학기술연구원, 디스플레이.나노 소자 연구실) ;
  • 장진 (경희대학교, 정보디스플레이 공학과) ;
  • 오명환 (단국대학교, 전기전자컴퓨터 공학부) ;
  • 주병권 (한국과학기술연구원, 디스플레이.나노 소자 연구실)
  • Kim, Jong-Moo (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Lee, Joo-Woo (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Kim, Young-Min (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Park, Jung-Soo (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Kim, Jae-Gyeong (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Jang, Jin (Department of Information display, Kyung Hee University) ;
  • Oh, Myung-Hwan (School of Electrical, Electronics and Computer Engineering, Dankook University) ;
  • Ju, Byeong-Kwon (Display and Nano Devices Lab., Korea Institute of Science and Technology)
  • 발행 : 2004.05.06

초록

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

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