• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.13.1-13.1
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• 2007

• 전자공학회지
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• 제34권7호통권278호
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• pp.44-53
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• 2007

• 산업경영시스템학회지
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• 제38권3호
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• pp.49-55
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• 2015

Nanotechnology has been growing constantly and it is becoming the leading technology in scientific research and development. Although nanotechnology has important applications in broad variety of fields without boundary of any particular industrial area, the study of nanotechnology related to its commercialization has been conducted in a few ways. To put that figure in context, this study investigates public and expert perceptions about negative potentials of nanotechnology. Through a series of surveys with public (N = 541) and experts (N = 62), we analyzed about public willingness to pay for nano-applied products. Survey results showed that public and experts preferred nano-applied products in the order of electronics, cosmetics, and food and medicine. Experts express high payment intention to electronics rather than public intention. In addition, the survey results showed the purchasing intention of both public and expert group was affected by the attributes of nano-applied products in the order of risk fatality, risk chance, certification, and labeling. But experts put more importance in risk fatality than risk chance comparing to public. Through the case analysis of the effects of labeling and certification, we revealed either labeling or certification can induce both public and experts to buy the nano-applied products with high risk chance and low risk fatality. However, for the nano-applied product with high risk fatality and low risk chance, both labeling and certification are simultaneously required to make customers have positive purchasing intention. The result of this study could be utilized for the nanotechnology-based company to get the consumer behavior information about nano-based product and to establish their marketing strategy.

• Tribology and Lubricants
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• 제32권3호
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• pp.75-81
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• 2016

Future electronics such as electronic paper and foldable cellphone are required to be flexible and transparent and should have a high performance. In order to fabricate the flexible electronics using flexibility transfer process, techniques for transferring various devices from rigid substrate onto flexible substrate by elastomeric stamp, have been developed. Adhesion between the elastomeric stamp and various devices is crucial for successful transfer process. The adhesion can be controlled by the thickness of the stamp, separation velocity, contact load, and stamp surface treatment. In this study, we fabricated the bump shape stamp consisting of a UV-curable polymer and investigated the effects of curing condition, separation velocity, and contact load on the adhesion characteristics of bumps. The bumps with hemispherical shape were fabricated using a dispensing process, which is one of the ink-jet printing techniques. Curing conditions of the bumps were controlled by the amount of UV irradiation energy. The adhesion characteristics of bumps are evaluated by adhesion test. The results show that the pull-off forces of bumps were increased and decreased as UV irradiation energy increased. For UV irradiation energies of 300 and 500 mJ/cm², the pull-off forces were increased as the separation velocity increased. The pull-off forces also increased with the increase of contact load. In the case of UV irradiation energy above 600 mJ/cm², however, the pull-off forces were not changed. Therefore, we believe that the bump shape stamp can be applied to roll-based transfer process and selective transfer process as an elastomeric stamp.

• 전기전자학회논문지
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• 제22권2호
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• pp.420-426
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• 2018

가까운 미래에, 전자의 ballastic 혹은 near-ballastic 이동이 가능한 CNT(Carbon NanoTube)를 활용한 CNTFET(Carbon NanoTube Field Effect Transistor)은 현재의 실리콘 기반 트랜지스터를 교체할 유력한 후보 중 하나로 고려되고 있다. 고성능의 CNTFET으로 대규모 집적회로를 구현하기 위해서는 semiconducting CNT가 CNTFET 안에 동일한 간격과 높은 밀도로 정렬되어 배치되어야 하지만, CNTFET 공정의 미성숙으로, CNTFET 안의 CNT는 불규칙하게 배치하게 되고, 현존하는 HSPICE 라이브러리 파일은 불규칙한 CNT 배치에 의한 성능의 변화를 회로 레벨에서 평가할 수 있는 기능을 지원하지 않는다. 이러한 성능의 변화를 평가하기 위해서 선형 프로그래밍을 활용한 방법이 과거에 제안되었으나, CNTFET의 전류와 게이트 커패시턴스를 계산하는 과정에서 오차가 발생할 수 있는 문제점이 있다. 본 논문에서는 언급한 오차가 발생되는 이유에 대해서 자세히 논하고, 이 오차를 줄일 수 있는 새로운 방법을 제시하고자 한다. 시뮬레이션 검토 결과, 새롭게 제시된 방법이 기존 방법의 오차, 7.096%를 3.15%까지 줄일 수 있음을 보이고 있다.

• 전자공학회논문지
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• 제50권10호
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• pp.239-244
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• 2013

본 논문에서는 고속 PMIC(Power Management Integrated Circuit) 회로를 위한 저전압 입력 보호기능을 가지는 UVLO(Under Voltage Lock Out) 기능이 탑재된 LDO(Low Drop-Out) 레귤레이터를 설계하였다. 설계된 LDO 레귤레이터는 밴드갭 기준전압 회로, 오차 증폭회로, 파워 트랜지스터 등으로 이루어지진다. LDO 레귤레이터는 5 V 전원전압으로부터 3.3 V 출력을 갖도록 설계되었으며, 저전압 입력보호 기능을 하는 UVLO 회로는 전원부와 파워 트랜지스터 사이에 삽입된다. 또한 UVLO는 5 V 구동전압에서, 하강 시 2.7 V 에서 LDO 레귤레이터 동작을 멈추게 하고, 구동전압 상승 시 4.0 V 에서 LDO 레귤레이터가 정상 동작한다. $1{\mu}m$ 20 V 고전압 CMOS 공정을 사용하여 모의실험 한 결과, 설계한 LDO 레귤레이터는 5.88 mV/V의 라인레귤레이션을 가지고, 부하전류가 0 mA에서 200 mA로 변할 때 27.5 uV/mA의 로드레귤레이션을 보였다.

• 한국광학회지
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• 제17권1호
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• pp.54-59
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• 2006

본 논문에서는 집적 광학 광도파로 소자 기술을 적용하여 생화학 물질의 성분을 정밀하게 측정 가능한 광소자로서 폴리머 광도파로와 브래그 격자를 이용하는 구조를 최초로 제안하였다. 유효굴절률법과 전송행렬법을 이용하여 최적의 감도를 가지는 브래그 격자 광도파로를 설계하였으며 코아와 하부 클래딩의 굴절률이 각각 1.540, 1.430인 폴리머를 이용하여 코아 두께가 $3{\mu}m$ 인 구조의 반전립 광도파로를 제작하였다. 코아 층까지 완성된 도파로 위에 레이저 빔 간섭계와 플라즈마 에칭을 이용하여 격자를 형성한 뒤 격자표면에 20 nm 두께의 Au층을 증착하고 칼릭사린(calixarene) 단분자층을 만들어 바이오센서를 제작하였다. 제작된 광센서를 이용하여 PBS(phosphate bufferedsaline) 용액에 함유된 $K^+$의 농도에 따라 브래그 반사픽이 단파장으로 이동하는 것을 관찰할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• 폴리머
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• 제38권3호
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• pp.358-363
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• 2014

원자력현미경(AFM) tip을 표면 처리하여 임프린트용 acrylate 레진과의 접착력을 측정하였다. 표면 처리를 하지 않은 실리콘 tip에 비하여 $CH_4$ 플라즈마로 소수성 처리한 경우 접착력은 38% 감소한 반면 친수성의 $O_2$ 플라즈마로 처리한 경우에는 접착력이 1.6 배 증가하였다. 이러한 AFM 결과들은 정성적 실험 결과 밖에 얻을 수 없는 cross-cut 접착실험에 비하여 매우 구체적인 정량적 결과들을 제공하였다. 나노 크기의 임프린트 패턴을 전사하는 경우, 몰드와 레진 사이 접촉 면적이 커져서 시료 전체의 접착력이 커지기 때문에 패턴 크기가 작아지는 나노임프린트 공정에서는 몰드 표면 처리 문제가 더욱 중요하게 되는 것을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.