• 제목/요약/키워드: Nano-Electronics

검색결과 743건 처리시간 0.03초

Nano-scale CMOS에 적용하기 위한 Ni-Ta 합금을 이용한 Ni-Germanosilicide의 열안정성 개선 (Thermal Stability Improvement of Ni Germanosilicide using Ni-Ta alloy for Nano-scale CMOS Technology)

  • 김용진;오순영;윤장근;이원재;아그츠바야르투야;지희환;김도우;허상범;차한섭;김영철;이희덕;왕진석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.607-610
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    • 2005
  • In this paper, Ni Germanosilicide using Ni-Ta/Co/TiN is proposed to improve thermal stability. The sheet resistance of Ni Germanosilicide utilizing pure Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30min. However, using the proposed Ni-Ta/Co/TiN structure, low temperature silicidation and wide range of RTP process window were achieved.

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Formation Temperature Dependence of Thermal Stability of Nickel Silicide with Ni-V Alloy for Nano-scale MOSFETs

  • Tuya, A.;Oh, S.Y.;Yun, J.G.;Kim, Y.J.;Lee, W.J.;Ji, H.H.;Zhang, Y.Y.;Zhong, Z.;Lee, H.D.
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.611-614
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    • 2005
  • In this paper, investigated is the relationship between the formation temperature and the thermal stability of Ni silicide formed with Ni-V (Nickel Vanadium) alloy target. The sheet resistance after the formation of Ni silicide with the Ni-V showed stable characteristic up to RTP temperature of $700\;^{\circ}C$ while degradation of sheet resistance started at that temperature in case of pure-Ni. Moreover, the Ni silicide with Ni-V indicated more thermally stable characteristic after the post-silicidation annealing. It is further found that the thermal robustness of Ni silicide with Ni-V was highly dependent on the formation temperature. With the increased silicidation temperature (around $700\;^{\circ}C$), the more thermally stable Ni silicide was formed than that of low temperature case using the Ni-V.

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금속 나노입자 프린팅 공정을 이용한 유연전기소자 연구 현황 (Research Status on Flexible Electronics Fabrication by Metal Nano-particle Printing Processes)

  • 고승환
    • 한국입자에어로졸학회지
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    • 제6권3호
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    • pp.131-138
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    • 2010
  • Flexible electronics are the electronics on flexible substrates such as a plastic, fabric or paper, so that they can be folded or attached on any curved surfaces. They are currently recognized as one of the most innovating future technologies especially in the area of portable electronics. The conventional vacuum deposition and photolithographic patterning methods are well developed for inorganic microelectronics. However, flexible polymer substrates are generally chemically incompatible with resists, etchants and developers and high temperature processes used in conventional integrated circuit processing. Additionally, conventional processes are time consuming, very expensive and not environmentally friendly. Therefore, there are strong needs for new materials and a novel processing scheme to realize flexible electronics. This paper introduces current research trends for flexible electronics based on (a) nanoparticles, and (b) novel processing schemes: nanomaterial based direct patterning methods to remove any conventional vacuum deposition and photolithography processes. Among the several unique nanomaterial characteristics, dramatic melting temperature depression (Tm, 3nm particle~$150^{\circ}C$) and strong light absorption can be exploited to reduce the processing temperature and to enhance the resolution. This opens a possibility of developing a cost effective, low temperature, high resolution and environmentally friendly approach in the high performance flexible electronics fabrication area.

나노급 CMOSFET을 위한 SOI기판에 Doping된 B11을 이용한 Ni-Silicide의 열안정성 개선 (Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET)

  • 정순연;오순영;김용진;이원재;장잉잉;종준;이세광;왕진석;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.24-25
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    • 2006
  • In this study, Ni silicide on the SOI substrate doped B11 is proposed to improve thermal stability. The sheet resistance of Ni-silicide utilizing pure SOI substrate increased after the post-silicidation annealing at $600^{\circ}C$ for 30 min. However, using the proposed B11 implanted substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min.

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Reduction of Gamma Distortion in Oblique Viewing Directions in Polymer-stabilized Vertical Alignment Liquid Crystal Mode

  • Kim, Hyo Joong;Lim, Young Jin;Murali, G.;Kim, Min Su;Kim, Gi Heon;Kim, Yong Hae;Lee, Gi-Dong;Lee, Seung Hee
    • Current Optics and Photonics
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    • 제1권2호
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    • pp.157-162
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    • 2017
  • In large liquid crystal displays, the image quality in an oblique viewing direction is a crucial issue. From this perspective, 8-domain polymer-stabilized vertical alignment (PS-VA) mode has been developed to suppress the color shift in oblique viewing directions, compared to that in 4-domain PS-VA mode. To realize the 8-domain PS-VA, the four domains in a pixel are each divided into two regions, such that applying different electric potentials result in different tilt angles in these two regions, while keeping four azimuthal directions in each domain. However, applying different voltages in a pixel causes drawbacks, such as requiring additional processes to construct a capacitor and a transistor, which will further reduce the aperture ratio. Here we propose a different approach to form the 8-domain, by controlling surface polar anchoring energy and the width of patterned electrodes in two regions of a pixel. As a result, the gamma-distortion index (GDI), measured at an azimuthal angle of $0^{\circ}$, is reduced by about 23% and 8%, compared to that of a conventional 4-domain at polar angles of $30^{\circ}$ and $60^{\circ}$ respectively.

나노임프린팅 기술을 이용한 유연성 브래그 반사 광도파로 소자 (Bragg Reflecting Waveguide Device Fabricated on a Flexible Substrate using a Nano-imprinting Technology)

  • 김경조;이정아;오민철
    • 한국광학회지
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    • 제18권2호
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    • pp.149-154
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    • 2007
  • 저가의 소자 개발이 가능한 나노임프린팅 공정을 도입하여 510 nm 주기의 브래그 격자 구조를 가지는 폴리머 광도파로 소자를 제작하였다. 폴리머 격자 광소자의 온도 의존성을 감소시키기 위한 방법으로 플라스틱 박막으로 이루어진 유연성 기판상에 브래그 격자를 제작하는 것이 필요하다. 임프린팅 공정을 손쉽게 수행하기 위한 광도파로 구조를 채택하였으며, 코아와 클래딩의 굴절률이 각각 1.540, 1.430인 폴리머를 이용하여 코아 두께가 $3{\mu}m$인 단일모드 광도파로 구조를 얻을 수 있었다. 유연성 기판 브래그 격자 광도파로 소자의 특성을 Si기판 브래그 격자 광도파로 소자와 비교하여 관측한 결과, 유연성 기판 도입에 따른 브래그 반사 소자의 성능 저하는 나타나지 않았다.

연속파 테라헤르츠 포토믹수를 위한 폴디드 공진 안테나 (Resonant Folded Dipole Antennas for Continuous-Wave Terahertz Photomixer)

  • 문경식;박홍규;김정회;정은아;이경인;한해욱
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.181-182
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    • 2006
  • Photoconductive three-wire folded dipole antennas for terahertz photomixers have been developed. The folded antennas are characterized by a free space time-domain measurement technique, and the measured data are in good agreement with the simulation results. The folded dipole antennas have much higher antenna resistance than other resonant dipole antennas, implying that they can be used for higher output power of THz photomixers.

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Extraction of Ballistic Parameters in 65 nm MOSFETs

  • Kim, Jun-Soo;Lee, Jae-Hong;Kwon, Yong-Min;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.55-60
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    • 2009
  • The channel backscattering coefficient and injection velocity have been extracted experimentally in 65nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

Reduction of an Operating Voltage of Liquid Crystal Display based on Kerr Effect

  • Kim, Min-Su;Kim, Mi-Young;Kang, Byeong-Gyun;Kim, Mi-Kyung;Yoon, Su-Kin;Choi, Suk-Won;Lee, Gi-Dong;Lee, Seung-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.637-640
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    • 2009
  • The LCD based on Kerr effect is highly interesting because it uses an optically isotropic state with no need of alignment layer and it shows sub-millisecond response time. The problem of the device is that it requires very high operating voltage and the transmittance is relatively low compared with other LCDs that use nematic LC. In this work, we study on various electrode structures and driving method which can lower operating voltage.

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