Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET

나노급 CMOSFET을 위한 SOI기판에 Doping된 B11을 이용한 Ni-Silicide의 열안정성 개선

  • Jung, Soon-Yen (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh, Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim, Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Won-Jae (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhong, Zhun (Dept. of Electronics Engineering, Chungnam National University) ;
  • Li, Shi-Guang (Dept. of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • Published : 2006.06.22
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Abstract

In this study, Ni silicide on the SOI substrate doped B11 is proposed to improve thermal stability. The sheet resistance of Ni-silicide utilizing pure SOI substrate increased after the post-silicidation annealing at $600^{\circ}C$ for 30 min. However, using the proposed B11 implanted substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min.

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