• Journal of KIISE:Computer Systems and Theory
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• v.36 no.5
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• pp.412-421
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• 2009

Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, and therefore erase operations are required prior to rewriting. These extra operations cause performance degradation of NAND flash memory file system. Since it also has an upper limit to the number of erase operations for a specific location, frequent erases should reduce the lifetime of NAND flash memory. These problems can be resolved by delaying write operations in order to improve I/O performance: however, it will lower the cache hit ratio. This paper proposes a policy of page management using double cache for NAND flash memory file system. Double cache consists of Real cache and Ghost cache to analyze page reference patterns. This policy attempts to delay write operations in Ghost cache to maintain the hit ratio in Real cache. It can also improve write performance by reducing the search time for dirty pages, since Ghost cache consists of Dirty and Clean list. We find that the hit ratio and I/O performance of our policy are improved by 20.57% and 20.59% in average, respectively, when comparing them with the existing policies. The number of write operations is also reduced by 30.75% in average, compared with of the existing policies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.25-32
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• 2011

We have analyzed adjacent cell dependency of threshold voltage shift caused by the cell to cell interference, and we proposed a 3-adjacent-cell model to model the pattern dependency of the threshold voltage shift. The proposed algorithm is verified by using MATLAB simulation and measurement results. In the experimental results, we found that accuracy of the proposed simple 3-adjacient-cell model is comparable to the widely used conventional 8-adjacient-cell model. The Bit Error Rate (BER) of LSB and of MSB is improved by 28.9% and 19.8%, respectively, by applying the proposed algorithm based on 3-adjacent-cell model to 20nm-class 2-bit MLC NAND flash memories.

• Journal of IKEEE
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• v.25 no.4
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• pp.774-777
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• 2021

In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO₂, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structure and on/off current characteristics are improved in Bit Line(BL). As a result of the simulation, in the CTF-F structure, the channel length of String Select Line(SSL) and Ground Select Line(GSL) was 100 nm, which was reduced by 33% compared to the conventional CTF structure, but almost the same off-current characteristics were confirmed. In addition, it was confirmed that the inversion layer was formed stronger in the channel during the program operation, and the current through the BL was increased by about 2 times.

• Journal of Internet of Things and Convergence
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• v.8 no.4
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• pp.9-15
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• 2022

NAND flash memory is used as a medium for various storage devices due to its high data processing speed with low power consumption. However, since the read processing speed of data is about 10 times faster than the write processing speed, various studies are being conducted to improve the speed difference. In particular, flash dedicated buffer management policies have been studied to improve write speed. However, SSD(solid state disks), which has recently been used for various purposes, is more vulnerable to read performance than write performance. In this paper, we find out why read performance is slower than write performance in SSD composed of NAND flash memory and study buffer management policies to improve it. The buffer management policy proposed in this paper proposes a method of improving the speed of a flash-based storage device by analyzing the pattern of read data and applying a policy of pre-reading data to be requested in the future from NAND flash memory. It also proves the effectiveness of the read-ahead policy through simulation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.3
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• pp.127-139
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• 2014

In this paper, we present two signal processing techniques for designing binary error correction codes for Multi-Level Cell(MLC) NAND flash memory. MLC NAND flash memory saves the non-binary symbol at each cell and shows asymmetric channel LLR l-density which makes it difficult to design soft-decision binary error correction codes such as LDPC codes and Polar codes. Therefore, we apply density mirroring and EM algorithm for approximating the MLC NAND flash memory channel to the binary-input memoryless channel. The density mirroring processes channel LLRs to satisfy roughly all-zero codeword assumption, and then EM algorithm is applied to l-density after density mirroring for approximating it to mixture of symmetric Gaussian densities. These two signal processing techniques make it possible to use conventional code design algorithms, such as density evolution and EXIT chart, for MLC NAND flash memory channel.

• Journal of Internet of Things and Convergence
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• v.7 no.4
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• pp.9-14
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• 2021

In computing systems that require high reliability, the method of predicting the lifetime of a storage device is one of the important factors for system management because it can maximize usability as well as data protection. The life of a solid state drive (SSD) that has recently been used as a storage device in several storage systems is linked to the life of the NAND flash memory that constitutes it. Therefore, in a storage system configured using an SSD, a method of accurately and efficiently predicting the lifespan of a NAND flash memory is required. In this paper, a method for optimizing the lifetime prediction of a flash memory-based storage device using the frequency of NAND flash memory failure is proposed. For this, we design a cost matrix to collect the frequency of defects that occur when processing data in units of Drive Writes Per Day (DWPD). In addition, a method of predicting the remaining cost to the slope where the life-long finish occurs using the Gradient Descent method is proposed. Finally, we proved the excellence of the proposed idea when any defect occurs with simulation.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Korea Society of Computer and Information
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• v.22 no.9
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• pp.1-8
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• 2017

In this paper, we propose a file system for flash memory which remedies shortcomings of existing flash memory file systems. Besides supporting large block size, the proposed file system reduces time in initializing file system significantly by adopting logical address comprised of erase block number and bitmap for pages in the block to find a page. The file system is suitable for embedded systems with limited main memory since it has small in-memory data structures. It also provides efficient management of obsolete blocks and free blocks, which contribute to the reduction of file update time. Finally the proposed file system can easily configure the maximum file size and file system size limits, which results in portability to emerging larger flash memories. By conducting performance evaluation studies, we show that the proposed file system can contribute to the performance improvement of embedded systems.

• Proceedings of the Korean Society of Computer Information Conference
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• 2018.07a
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• pp.357-359
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• 2018

최근 메모리 반도체 시장은 SD(Secure Digital) 메모리 카드, SSD(Solid State Drive)등의 보급률 증가로 메모리 반도체의 시장이 대규모로 증가하고 있다. 메모리 반도체는 개인용 컴퓨터 뿐만 아니라 스마프폰, 테플릿 PC, 교육용 임베디드 보드 등 다양한 산업에서 이용 되고 있다. 또한 메모리 반도체 생산 업체가 대규모로 메모리 반도체 산업에 투자하면서 메모리 반도체 시장은 대규모로 성장되었다. 플래시 메모리는 크게 NAND-Type과 NOR-Type으로 나뉘며 플로팅 게이트 셀의 전압의 따라 SLC(Single Level Cell)과 MLC(Multi Level Cell) 그리고 TLC(Triple Level Cell)로 구분 된다. SLC 및 MLC NAND-Type 플래시 메모리는 많은 연구가 진행되고 이용되고 있지만, TLC NAND-Tpye 플래시 메모리는 많은 연구가 진행되고 있지 않다. 본 논문에서는 기존에 제안된 SLC 및 MLC NAND-Type 플래시 메모리에서 제안된 큐브 패턴을 TLC NAND-Type 플래시 메모리에서 적용 가능한 큐브 패턴 및 알고리즘을 제안한다.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.157-172
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• 2014

Contemporary embedded systems often use NAND flash memory instead of hard disks as their swap space of virtual memory. Since the read/write characteristics of NAND flash memory are very different from those of hard disks, an efficient page replacement algorithm is needed for this environment. Our analysis shows that temporal locality is dominant in virtual memory references but that is not the case for write references, when the read and write references are monitored separately. Based on this observation, we present a new page replacement algorithm that uses different strategies for read and write operations in predicting the re-reference likelihood of pages. For read operations, only temporal locality is used; but for write operations, both write frequency and temporal locality are used. The algorithm logically partitions the memory space into read and write areas to keep track of their reference patterns precisely, and then dynamically adjusts their size based on their reference patterns and I/O costs. Without requiring any external parameter to tune, the proposed algorithm outperforms CLOCK, CAR, and CFLRU by 20%-66%. It also supports optimized implementations for virtual memory systems.