• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.121-130
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• 2017

NAND flash memory has advantages of non-volatility, little power consumption and fast access time. However, it suffers from inability that does not provide to update-in-place and the erase cycle is limited. Moreover, the unit of read/write operation is a page and the unit of erase operation is a block. Therefore, erase operation is slower than other operations. The AGC, the proposed garbage collection policy focuses on not only garbage collection time reduction for real-time guarantee but also wear-leveling for a flash memory lifetime. In order to achieve above goals, we define three garbage collection operating modes: Fast Mode, Smart Mode, and Wear-leveling Mode. The proposed policy decides the garbage collection mode depending on system CPU usage rate. Fast Mode selects the dirtiest block as victim block to minimize the erase operation time. However, Smart Mode selects the victim block by reflecting the invalid page number and block erase count to minimizing the erase operation time and deviation of block erase count. Wear-leveling Mode operates similar to Smart Mode and it makes groups and relocates the pages which has the similar update time. We implemented the proposed policy and measured the performance compare with the existing policies. Simulation results show that the proposed policy performs better than Cost-benefit policy with the 55% reduction in the operation time. Also, it performs better than Greedy policy with the 87% reduction in the deviation of erase count. Most of all, the proposed policy works adaptively according to the CPU usage rate, and guarantees the real-time performance of the system.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.5
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• pp.422-428
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• 2009

NAND flash memory is widely used in embedded systems because of many attractive features, such as small size, light weight, low power consumption and fast access speed. However, it requires garbage collection, which includes erase operations. Erase operation is slower than other operations. Further, a block has a limited erase lifetime (typically 100,000) after which a block becomes unusable. The proposed garbage collection policy focuses on minimizing the total number of erase operations, the deviation value of each block and the garbage collection time. NAND flash memory consists of pages of three types, such as valid pages, invalid pages and free pages. In order to achieve above goals, we use a page ratio to decide when to do garbage collection and to select the target victimblock. Additionally, we implement allocating method and group management method. Simulation results show that the proposed policy performs better than Greedy or CAT with the maximum rate 85% of reduction in the deviation value of the erase operations and 6% reduction in garbage collection time.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.7-12
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• 2023

One of the most important characteristics of digital forensics is integrity. Integrity means that the data has not been tampered with. If evidence is collected during digital forensic and later tampered with, it cannot be used as evidence. With analog evidence, it's easy to see if it's been tampered with, for example, by taking a picture of it. However, the data on the storage media, or digital evidence, is invisible, so it is difficult to tell if it has been tampered with. Therefore, hash values are used to prove that the evidence data has not been tampered with during the process of collecting evidence and submitting it to the court. The hash value is collected from the stored data during the evidence collection phase. However, due to the internal behavior of NAND flash memory, the physical data shape may change over time from the acquisition phase. In this paper, we study the characteristics and techniques of flash memory that can cause the physical shape of flash memory to change even if no intentional data corruption is attempted.

• Proceedings of the Korean Information Science Society Conference
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• 2010.06a
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• pp.271-272
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• 2010

• Proceedings of the Korean Information Science Society Conference
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• 2007.10a
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• pp.253-254
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• 2007

• Journal of the Korea Society of Computer and Information
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• v.22 no.7
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• pp.1-7
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• 2017

As the capacity of NAND flash module increases, the amount of RAM increases for caching and maintaining the FTL mapping information. In order to reduce the amount of mapping information managed in the RAM, a demand-based address mapping method stores the entire mapping information in the flash and some valid mapping information in the form of cache in the RAM so that the RAM can be used efficiently. However, when cache miss occurs, it is necessary to read the mapping information recorded in the flash, so overhead occurs to translate the address. If the RAM space is not enough, the cache hit ratio decreases, resulting in greater overhead. In this paper, we propose a method using two tables called TPMT(Translation Page Mapping Table) and SMT(Segmented Translation Page Mapping Table) to utilize both temporal locality and spatial locality more efficiently. A performance evaluation shows that this method can improve the cache hit ratio by up to 30% and reduces the extra translation operations by up to 72%, compared to the TPM scheme.

• Journal of the Korea Society of Computer and Information
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• v.14 no.3
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• pp.41-49
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• 2009

Flash memory has become increasingly requestion for the importance and the demand as a storage due to its low power consumption, cheap prices and large capacity medium. This research is to design a high performance flash memory structure for the substitution of a hard-disk by dynamic prefetching of aggressive spatial locality from the spatial smart buffer system. The proposed buffer system in a NAND flash memory consists of three parts, i.e., a fully associative victim buffer for temporal locality, a fully associative spatial buffer for spatial locality, and a dynamic fetching unit. We proposed new dynamic prefetching algorithm for aggressive spatial locality. That is to use the flash memory instead of the hard disk, the proposed flash system can achieve better performance gain by overcoming many drawbacks of the flash memory by the new structure and the new algorithm. According to the simulation results, compared with the smart buffer system, the average miss ratio is reduced about 26% for Mediabench applications. The average memory access times are improved about 35% for Mediabench applications, over 30% for Spec2000 applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.41-47
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• 2010

This paper has proposed parallel BCH, one of error correction coding methods which has been used to NAND flash memory for SSD(solid state disk). To alter error correction capability, the proposed design improved reliability on data block has higher error rate as used frequency increasingly. Decoding parallel process bit width is as two times as encoding parallel process bit width, that could reduce decoding processing time, accordingly resulting in one half reduction over conventional ECC.

• Proceedings of the Korean Society of Computer Information Conference
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• 2018.01a
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• pp.1-4
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• 2018

본 논문에서는 낸드 플래시 메모리 시스템에서 가비지 컬렉션과 마모도 평준화를 동시에 수행하는 환경에서 발생 할 수 있는 세 가지 내재된 문제점들을 제시한다. 제시한 문제점들은 낸드 플래시 메모리의 추가적인 수명 연장을 방해 할 뿐만 아니라, 페이지 이주 오버헤드를 초래하는 근본적인 원인이 된다. 이러한 내재된 문제점들의 원인 분석은 다음과 같이 진행한다. 첫 번째, 세 가지 내재된 문제점들에 대한 시나리오를 구성하고, 구성한 시나리오에서 발생할 수 있는 문제점들을 제시한다. 두 번째, 각 시나리오에서 발생하는 문제점을 파악하고, 그로 인해 낸드 플래시 메모리의 수명에 영향을 끼칠 수 있는 위험성을 분석한다. 마지막으로 분석한 위험성을 토대로 이를 이론적으로 고찰하고, 그에 대한 해결책을 제시한다. 이러한 해결 방안은 낸드 플래시 메모리의 추가적인 수명 연장에 대한 새로운 방향성을 제시할 것이다. 또한 이것은 가비지 컬렉션과 마모도 평준화를 동시에 수행하는 모든 시스템 환경에 적용 가능하므로, 기존 기법들의 장점들을 그대로 활용함과 동시에 낸드 플래시 메모리의 추가적인 수명 연장을 기대 할 수 있다.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.85-91
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• 2012

In this paper, the large data processing and suitable FAT32 file system for industrial system using a PLC and CF memory was implemented. Most of PLC can't save the large data in user data memory. So it's required to the external devices of CF memory or NAND flash memory. The CF memory is used in order to save the large data of PLC system. The file system using the CF memory is NTFS, FAT, and FAT32 system to configure in various ways. Typically, the file system which is widely used in industrial data storage has been implemented as modified FAT32. The conventional FAT 32 file system was not possible for multiple writing and high speed data accessing. The proposed file system was implemented by the large data processing module can be handled that the files are copied at the 40 bytes for 1msec speed logging and creating 8 files at the same time. In a sudden power failure, high reliability was obtained that the problem was solved using a power fail monitor and the non-volatile random-access memory (NVSRAM). The implemented large data processing system was applied the modified file system as FAT32 and the good performance and high reliability was showed.