• Title/Summary/Keyword: N-drift

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통신위성에 작용하는 섭동력의 영향평가와 궤도결정

  • 박수홍;조겸래
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1992.04a
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    • pp.200-205
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    • 1992
  • This study concerns about the orbit prediction and orbit determination of Korean future connumication satellite, called "Moogunghwa" , which will be motioned in the geo-stationary orbit. Perturbation effect on the satellite orbit due to nonspherical term, lunar and solar gravity, drag force of the atmospher, and solar radiation pressure was investigated. Cowell's method is used for orbit prediction. Orbit determination was performed by using Extended Kalman Filter which is suitable for real-time orbit determination. The result shows that the chacteristics of the satellite orbit has east-west and south-north drift. So the periodic control time and control value in the view of the periodic of error can be provided. The orbit determination demonstrated the effectiveness since the convergence performance on the positon and velocity error, and state error standard deviation is reasonable.

Design of Main Body and Edge Termination of 100 V Class Super-junction Trench MOSFET

  • Lho, Young Hwan
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.565-569
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    • 2018
  • For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

A Study on the SOI RESURF LDMOS with a Taper Oxide on the Drain (경사진 드레인 산화막을 갖는 SOI RESURF LDMOS에 관한 연구)

  • Park, Il-Yong;Kim, Sung-Lyong;Choi, Yearn-Ik;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1606-1608
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    • 1996
  • An the SOI RESURF LDMOS with a taper oxide on the drain is proposed and verified by the device simulator, MEDICI. Simulation results on the proposed LDMOS exhibits the increase in the breakdown voltage by 12 % and reduction in the drift region length by 25 %.

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COSMIC RAY ACCELERATION AT BLAST WAVES FROM TYPE Ia SUPERNOVAE

  • Kang, Hye-Sung
    • Journal of The Korean Astronomical Society
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    • v.39 no.4
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    • pp.95-105
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    • 2006
  • We have calculated the cosmic ray(CR) acceleration at young remnants from Type Ia supernovae expanding into a uniform interstellar medium(ISM). Adopting quasi-parallel magnetic fields, gasdynamic equations and the diffusion convection equation for the particle distribution function are solved in a comoving spherical grid which expands with the shock. Bohm-type diffusion due to self-excited $Alfv\acute{e}n$ waves, drift and dissipation of these waves in the precursor and thermal leakage injection were included. With magnetic fields amplified by the CR streaming instability, the particle energy can reach up to $10^{16}Z$ eV at young supernova remnants(SNRs) of several thousand years old. The fraction of the explosion energy transferred to the CR component asymptotes to 40-50 % by that time. For a typical SNR in a warm ISM, the accelerated CR energy spectrum should exhibit a concave curvature with the power-law slope flattening from 2 to 1.6 at $E{\gtrsim}0.1$ TeV.

Prebreakdown Avalanche Pulses in Compressed SF6 under Uniform Field (평등전계에서 압축 SF6가스의 절연파괴 선구 애벌렌체의 전류 펄스)

    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.33 no.3
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    • pp.106-111
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    • 1984
  • Prebreakdown current pulses arising from avalanche growth in SF6 were recorded under static uniform field at pressures up to about 400kpa. At pressures less than 100kpa the current pulses consist of the electron component observed as the fast rise of current, the negative ioncomponent which is superimposed, and the positive ion component comprising the tail of the pulse. The values of positive ion drift velocity were measured from the present pulse data. At pressures in excess of about 100 Kpa the pulse shapes becam distorted such that quantitative analysis was no longer possible, and did not indicate the action of any photosecondary process at the cathode. Breakdown appers to result from the seperate development of single avalanche.

Analysis of electron transport characteristic in He gas by MCS (MCS에 의한 Helium 기체 중의 전자수송특성 해석)

  • Song, Byoung-Doo;Ha, Sung-Chul;Seo, Sang-Hyoen;Moon, Ki-Seok;Yoo, Hoy-Young;Kim, Sang-Nam
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1752-1754
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    • 1998
  • Recently the research about electron transport characteristic and energy distribute function in mixture gases within Helium, has been used and developed widely as industrial quality improvement of extinguish characteristic, electrical dielectric strength ability of application of each species high voltage apparatus, gas plasma etching progress of work to use manufacture of semiconductor, thin film molding by CVD, insulation film to use ultra LSI, etc. This paper analyze electron transport characteristic in the range E/N $1{\sim}60$[Td], pressure $0.1{\sim}6.0$[Torr] by MCS. It is necessary to seek electron drift velocity, diffusion coefficient, lonization coefficients, characteristic energy, mean energy and electron energy distribution function as electron transport characteristic.

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Study on the Design of Power MOSFET for Smart LED Driver ICs Package (스마트 LED Driver ICs 패키지용 700 V급 Power MOSFET의 설계 최적화에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.75-78
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    • 2016
  • This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained $60{\mu}m$ N-drift layer depth, 791.29 V breakdown voltage, $0.248{\Omega}{\cdot}cm^2$ on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package.

Electron Energy Distribution Function in $CF_4$ Gas used by MCS-BE Algorithm ($CF_4$ 기체의 MCS-BEq 알고리즘에 의한 전자에너지 분포함수)

  • Park, Jae-Sae;Kim, Sang-Nam;Kim, Il-Nam
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.102-105
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    • 2002
  • In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1${\sim}$300 [Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

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Design and Fabrication of Super Junction MOSFET Based on Trench Filling and Bottom Implantation Process

  • Jung, Eun Sik;Kyoung, Sin Su;Kang, Ey Goo
    • Journal of Electrical Engineering and Technology
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    • v.9 no.3
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    • pp.964-969
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    • 2014
  • In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

A Study of the Insulation Characteristic in $CF_4$ Gas (시뮬레이션에 의한 $CF_4$ 기체의 전자수송특성)

  • Kim, Sang-Nam;Hwang, Cheong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.468-469
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    • 2007
  • In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-tenn approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

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