• The Magazine of the IEIE
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• v.37 no.8
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• pp.50-59
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• 2010

$0.18-{\mu}m$ high voltage technology 13.5V high voltage well-based symmetric EDMOS isolated by MTI was designed and fabricated. Using calibrated process and device model parameters, the characteristics of the symmetric and asymmetric EDMOS have been simulated. The asymmetric EDMOS has higher performance, better $R_{sp}$ / BVDSS figure-of-merit, short-channel immunity and smaller pitch size than the symmetric EDMOS. The asymmetric EDMOST is a good candidate for low-power and smaller source driver chips. The low voltage logic well-based EDMOS process has advantages over high voltage well-based EDMOS in process cost by eliminating the process steps of high-voltage well/drift implant, high-temperature long-time thermal steps, etc. The specific on-resistance of our well-designed logic well-based EDMOSTs is compatible with the smallest one published. TCAD simulation and measurement results show that the improved logic well-based nEDMOS has better electrical characteristics than those of the conventional one. The improved EDMOS proposed in this paper is an excellent candidate to be integrated with low voltage logic devices for high-performance low-power low-cost chips.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Proceedings of the Korea Concrete Institute Conference
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• 2001.05a
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• pp.139-144
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• 2001

The objective of this study is to investigate the behavior of 1/12 scale upper-wall lower-frame reinforced concrete structure subjected to earthquake excitations. For this purpose, Taft N21E earthquake accelerogram was simulated by using 4m$\times$4m shaking table. When the input acceleration is compared to that of output, it was found that simulation of shaking table is satisfactory. From the test results with peak ground acceleration(PGA) 0.22g, which corresponds to 0.11g in prototype by the similitude law, it can be observed that the model responded in elastic behavior and that large interstory drift occurred at the lower part of the structure.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.236-238
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• 2003

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/\mu$, in pure Ne were calculated over the wide E/N range from 0.01 to 800 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.349-352
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• 1997

The EEG amplifier satisfies high gain, high common mode rejection ratio(CMRR), high input impedance, low thermal drift, low noise and good d.c. performance. The Bipolar amplifier of this paper safisfies above categories and aim at minimization of the ESU(electric surgical unit) interference.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• International Journal of Concrete Structures and Materials
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• v.7 no.2
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• pp.135-153
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• 2013

This study investigates the direct displacement based design (DDBD) approach for different types of reinforced concrete structural systems including single moment-resisting, dual wall-frame and dual steel-braced systems. In this methodology, the displacement profile is calculated and the equivalent single degree of freedom system is then modeled considering the damping characteristics of each member. Having calculated the effective period and secant stiffness of the structure, the base shear is obtained, based on which the design process can be carried out. For each system three frames are designed using DDBD approach. The frames are then analyzed using nonlinear time-history analysis with 7 earthquake accelerograms and the damage index is investigated through lateral drift profile of the models. Results of the analyses and comparison of the nonlinear time-history analysis results indicate efficiency of the DDBD approach for different reinforced concrete structural systems.

• Journal of IKEEE
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• v.17 no.3
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.40-51
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• 1998

Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.