• 대한전기학회:학술대회논문집
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• 대한전기학회 1985년도 하계학술회의논문집
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• pp.215-218
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• 1985

In this paper, The electron drift velocity was measured from an experimental study of the open end heat pipe system by induced current method as alkali metal vapour was generated in ordinary region of a drift tube. The test condition was alkali metal vapour range from 3.6 to 20.1(Torr), temperature of 667 to 755(K), and E/N of $1{\times}10^{-16}$ to $1{\times}10^{-15}(v.cm^2)$. The results of this study were obtained essentially the same as the extrapolated prediction curve for electron drift velocity in the alkali metal Vapour of J. Lucas et 31 with range of E/N: $1{\times}10^{-17}$ to $1{\times}10^{-16}(v.cm^2)$, and the electron drift velocity was obtained the result an increase in alkali to E/N range from E/N $2.8{\times}10^{-17}$ to $5.6{\times}10^{-16}(v.cm^2)$ (E/N From 2.8 to 50 Td).

• 전자공학회논문지A
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• 제31A권12호
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• pp.100-105
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• 1994

SOI(Silicon-On-Insulator) pn 다이오드의 최적 수평길이($L_{dr}$)와 항복전압에 대한 해석적인 표현식을 n' 츠리프트 영역의 농도 및 두께, 매몰 산화막 두께의 함수로 유도하였다. 최적($L_{dr}$은 n'n접합의 수직 방향전계에 의한 항복전압과 n'np'접합으 수평방향 전계에 의한 항복전압이 같다는 조건으로부터 유도하였다. 해석적 표현식의 결과는 PISCESII를 사용한 시뮬레이션 결과와 잘 일치하였다.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.462-472
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• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.816-820
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• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.248-251
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• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.387-390
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• 1999

Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn $SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• ETRI Journal
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• 제36권5호
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• pp.829-834
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• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• 전기학회논문지P
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• 제59권2호
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• pp.146-150
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• 2010

Distribution Function and Drift velocities for electrons in $SF_6$-Ar mixtures gases used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method. The results obtained in this work will provide valuable information on the fundamental behaviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values.

• 전자공학회논문지D
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• 제36D권11호
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• pp.45-55
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• 1999

정상상태에서 반도체 소자의 전기적 특성을 분석할 수 있는 소신호 해석용 시뮬레이터를 개발하였다. 전위와 전자 및 정공 농도의 Slotboom변수에 대한 소신호 응답을 정의한 후 $S^3A$방법을 적용하여 ,DC 동작점에서 반도체 방정식을 선형화하였다. 행렬풀이를 위해 전진해법을 사용하여 메모리 소비량을 최소화하며 고주파 영역에서 소신호 해의 정확성을 향상시켰다. 구현된 알고리즘의 검증을 위해 3차원 구조를 갖는 N'P 다이오드 및 2차원 구조를 갖는 n-MOSFET에 대해 소신호 해석을 수행하여 MEDICI와 비교한 결과, 인가 전압에 따른 컨덕턴스와 캐패시턴스의 평균 상대 오차는 N'P 다이오드에서는 0.87%와 2.6%이고, n-MOSFET의 경우 7.75%와 2.24%로 나타났다. n-MOSFET에 대하여 입력신호의 주파수 변화에 따른 컨덕턴스와 캐패시턴스를 비교한 결과 MEDICI의 경우 10GHz까지 예측한 반면 본 논문이 제시한 방법을 이용한 모의실험은 100GHz까지 예측이 가능하여 고주파 영역에서 모의실험의 정확도가 향상됨을 확인하였다.

• 전기전자학회논문지
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• 제24권3호
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• pp.890-894
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• 2020

본 논문에서는 대표적인 ESD 보호소자인 LVTSCR의 구조적 변화를 통해 높은 홀딩전압 특성을 가지는 ESD 보호소자를 제안한다. 제안된 ESD 보호소자는 병렬 PNP path와 긴 N+ drift 영역을 삽입하여 기존의 LVTSCR보다 높은 홀딩전압을 가지며, 일반적인 SCR 기반 ESD보호소자의 단점인 Latch-up 면역특성을 향상시킨다. 또한 기생 BJT들의 유효 베이스 폭을 설계변수로 설정하였으며, N-Stack 기술을 적용하여 요구되는 application에 적용할 수 있도록 시놉시스사의 TCAD 시뮬레이션을 통해 제안된 ESD 보호소자의 전기적 특성을 검증하였다.