• Proceedings of the KIEE Conference
• /
• 1985.07a
• /
• pp.215-218
• /
• 1985

In this paper, The electron drift velocity was measured from an experimental study of the open end heat pipe system by induced current method as alkali metal vapour was generated in ordinary region of a drift tube. The test condition was alkali metal vapour range from 3.6 to 20.1(Torr), temperature of 667 to 755(K), and E/N of $1{\times}10^{-16}$ to $1{\times}10^{-15}(v.cm^2)$. The results of this study were obtained essentially the same as the extrapolated prediction curve for electron drift velocity in the alkali metal Vapour of J. Lucas et 31 with range of E/N: $1{\times}10^{-17}$ to $1{\times}10^{-16}(v.cm^2)$, and the electron drift velocity was obtained the result an increase in alkali to E/N range from E/N $2.8{\times}10^{-17}$ to $5.6{\times}10^{-16}(v.cm^2)$ (E/N From 2.8 to 50 Td).

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.100-105
• /
• 1994

Analytical expressions for the breakdown voltage and the optimum drift region length (L$_{dr}$) of SOI (Silicon-On-Insulator) pn diodes are derived in terms of the doping concentration and the thickness of the n- drift region and the buried oxide thickness. The optimum L$_{dr}$ is obtained from the condition that the breakdown voltage of the vertical electric field of n+n- junction equals to the of the lateral electric field of n+n-p+ junction. Analytical results agree reasonably with the numerical simulations using PISCESII.

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.462-472
• /
• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.9
• /
• pp.816-820
• /
• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.248-251
• /
• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.387-390
• /
• 1999

Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn $SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• ETRI Journal
• /
• v.36 no.5
• /
• pp.829-834
• /
• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.59 no.2
• /
• pp.146-150
• /
• 2010

Distribution Function and Drift velocities for electrons in $SF_6$-Ar mixtures gases used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method. The results obtained in this work will provide valuable information on the fundamental behaviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.11
• /
• pp.45-55
• /
• 1999

The small signal analyzer for the stationary drift-diffusion equation is developed. The slotboom variables of the potential, electron and hole concentrations for the response of applied small signal are defined and the stationary drift-diffusion equation is linearlized on DC operation point by $S^3A$ method. Frontal solver, which is used to solve the global matrix, progresses the accuracy of the solution in high frequency and minimizes the requirement of the memory. The simulations are executed on the structure of 3 dimensional N'P junction diode and 2 dimensional n-MOSFET to verify the proposed algorithm. The average relative errors of the conductance and the capacitance compared with MEDICI are about 26% and 0.67 for N'P junction diode and 7.75% and 2.24% for n-MOSFET. The simulation by the proposed algorithm can analyze the stationary drift-diffusion equation for applied small signal in high frequency region about 100GHz.

• Journal of IKEEE
• /
• v.24 no.3
• /
• pp.890-894
• /
• 2020

In this paper, we propose an ESD protection device with improved electrical characteristics through structural changes of LVTSCR, a typical ESD protection device. The proposed ESD protection device has a higher holding voltage than the existing LVTSCR by inserting a long N+ drift region and additional P-Well and N-Well, and improves the latch-up immunity, a chronic disadvantage of a general SCR-based ESD protection device. In addition, the effective base width of parasitic BJTs was set as a design variable, and the electrical characteristics of the proposed ESD protection device were verified through Synopsys' TCAD simulation so that it can be applied to the required application by applying the N-Stack technology.