• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.231-234
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• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

• Journal of Information Display
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• v.8 no.2
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• pp.20-24
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• 2007

Efficient white organic light-emitting diodes are fabricated with the blue and red electroluminescent (EL) units electrically connected in a stacked tandem structure by using a transparent doped organic p/n junction. The blue and red EL units consist of the light-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi) and 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j] quinolizin-8-yl)vinyl]-4H-pyran) (DCM2) doped tris(8-hydroxyquinoline) aluminum $(Alq_3)$, respectively. The organic p-n junction consists of ${\alpha}-NPD$ doped with $FeCl_3$ (15 % by weight ratio) and $Alq_3$ doped with Li (10 %). The EL spectra exhibit two peaks at 448 and 606 nm, resulting in white light-emission with the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.24). The tandem device shows the quantum efficiency of about 2.2 % at a luminance of 100 $cd/m^2$, higher than individual blue and red EL devices.

• Journal of Powder Materials
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• v.23 no.6
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• pp.420-425
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• 2016

N-doped carbon nanofibers as catalysts for oxygen-reduction reactions are synthesized using electrospinning and carbonization. Their morphologies, structures, chemical bonding states, and electrochemical performance are characterized. The optimized N-doped carbon nanofibers exhibit graphitization of carbon nanofibers and an increased nitrogen doping as well as a uniform network structure. In particular, the optimized N-doped carbon nanofibers show outstanding catalytic activity for oxygen-reduction reactions, such as a half-wave potential ($E_{1/2}$) of 0.43 V, kinetic limiting current density of $6.2mAcm^{-2}$, electron reduction pathways (n = 3.1), and excellent long-term stability after 2000 cycles, resulting in a lower $E_{1/2}$ potential degradation of 13 mV. The improvement in the electrochemical performance results from the synergistic effect of the graphitization of carbon nanofibers and the increased amount of nitrogen doping.

• Advances in materials Research
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• v.11 no.3
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• pp.225-235
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• 2022

It includes the synthesis of pristine ZnO nanoparticles and a series of Ag-doped zinc oxide nanoparticles was carried out by reflux method by varying the amount of silver (1, 3, 5, 7 and 9% by mol.). The morphology of these nanoparticles was investigated by SEM, XRD and FT-IR techniques. These techniques show that synthesized particles are homogenous spherical nanoparticles having an average particle size of about 50-100 nm along with some agglomeration. The photocatalytic activity of the ZnO nanoparticles and Ag doped ZnO nanoparticles were investigated via photodegradation of methylene blue (MB) as a standard dye. The data from the photocatalytic activity of these nanoparticles show that 7% Ag-doped ZnO nanoparticles exhibit much enhanced photocatalytic activity as compared to pristine ZnO nanoparticles and other percentages of Ag-doped ZnO nanoparticles. Furthermore, 7% Ag-doped ZnO was made composites with sulfur-doped graphitic carbon nitride by physical mixing method and a series of nanocomposites were made (3.5, 7.5, 25, 50, 75% by weight). It was observed that the 25% composites exhibited better photocatalytic performance than pristine S-g-C 3 N 4 and pure 7% Ag-doped ZnO. Tauc's plot also supports the photodegradation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.