한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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- Pages.288-288
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- 2012
Effect of Metallic Tungsten Concentration on Resistance Switching Behavior of Sputtered W-doped NbOx Films
- 발행 : 2012.02.08
초록
In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at