• Title/Summary/Keyword: N passivation

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Passivation of organic light emitting diodes with a-$SiN_x$ thin films grown by catalyzer enhanced chemical vapor deposition

  • Jeong, Jin-A;Kang, Jae-Wook;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.659-662
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    • 2007
  • The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

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Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure (Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과)

  • Kim, Jeong-Jin;Ahn, Ho-Kyun;Bae, Seong-Bum;Pak, Young-Rak;Lim, Jong-Won;Moon, Jae-Kyung;Ko, Sang-Chun;Shim, Kyu-Hwan;Yang, Jeon-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.862-866
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    • 2012
  • Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells (결정질 실리콘 태양전지 응용을 위한 SiNx 및 SiO2 박막의 패시베이션 특성 연구)

  • Jeong, Myung-Il;Choi, Chel-Jong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.1
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    • pp.41-45
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    • 2014
  • We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

Dielectric Passivation and Geometry Effects on the Electromigration Characteristics in Al-1%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.5 no.1
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    • pp.11-18
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    • 2001
  • Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

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Comparative study of surface passivation for Metamorphic HEMT using low-k Benzocyclobutene(BCB) (Metamorphic HEMT에서 low-k Benzocyclobutene (BCB)를 이용한 표면 passivation 비교 연구)

  • Baek, Yong-Hyun;Oh, Jung-Hun;Han, Min;Choi, Seok-Gyu;Lee, Bok-Hyung;Lee, Seong-Dae;Lee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.471-472
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    • 2006
  • The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

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Effect of Laser Ablation on Rear Passivation Stack for N-type Bifacial Solar Cell Application (N형 양면 수광 태양전지를 위한 레이저 공정의 후면 패시베이션 적층 구조 영향성)

  • Kim, Kiryun;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.30 no.5
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    • pp.262-266
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    • 2020
  • In this paper, we investigated the effect of the passivation stack with Al2O3, hydrogenated silicon nitride (SiNx:H) stack and Al2O3, silicon oxynitride (SiONx) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiONx films were deposited by plasma enhanced chemical vapor deposition on the Al2O3 thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiNx:H with Al2O3 stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiONx with Al2O3 stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al2O3/Si interface and Al2O3 layer of laser damaged area during annealing.

The Properties of Passivation Films on Al2O3/SiNX Stack Layer in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지의 Al2O3/SiNX 패시베이션 특성 분석)

  • Hyun, Ji Yeon;Song, In Seol;Kim, Jae Eun;Bae, Soohyun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.5 no.2
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    • pp.63-67
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    • 2017
  • Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

A Study on HF Chemical Passivation for Crystalline Silicon Solar Cell Application (결정질 태양전지를 위한 HF 화학 패시베이션 연구)

  • Choi, Jeong-Ho;Roh, Si-Cheol;Yu, Dong-Yeol;Li, Zhen-Hua;Kim, Yeong-Cheol;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.1
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    • pp.51-55
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    • 2011
  • The surface passivation is one of the important methods that can improve the efficiency of solar cells and can be classified into two methods: wet-chemical passivation and film passivation. In this paper, chemical HF treatment were employed for the passivation of n-type silicon wafers and their effects were studied. To investigate film passivation effects, the silicon nitride films were also deposited by PECVD (plasma-enhanced chemical vapor deposition) on n-type silicon wafers treated with chemical HF. The minority carrier lifetime measurements were used for evaluation of the passivation characteristics in the all experiments steps. We confirmed that the minority carrier lifetime was improved with chemical HF treatment due to passivation effects by H-termination.

Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs

  • Yang, Hyuck-Soo;Han, Sang-Youn;Hlad, M.;Gila, B.P.;Baik, K.H.;Pearton, S.J.;Jang, Soo-Hwan;Kang, B.S.;Ren, F.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.131-135
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    • 2005
  • The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

Sputtering of Multifunctional AlN Passivation Layer for Thermal Inkjet Printhead

  • Park, Min-Ho;Kim, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.50-50
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    • 2011
  • The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

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