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http://dx.doi.org/10.6111/JKCGCT.2014.24.1.041

Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells  

Jeong, Myung-Il (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University)
Choi, Chel-Jong (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.24, no.1, 2014 , pp. 41-45 More about this Journal
Abstract
We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.
Keywords
$SiN_x$; $SiO_2$; Passivation; Crystalline Si solar cells; Interface trap density;
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Times Cited By KSCI : 2  (Citation Analysis)
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