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http://dx.doi.org/10.21218/CPR.2017.5.2.063

The Properties of Passivation Films on Al2O3/SiNX Stack Layer in Crystalline Silicon Solar Cells  

Hyun, Ji Yeon (Department of Materials Science and Engineering, Korea University)
Song, In Seol (KU KIST Green School, Graduated school of Energy and Environment, Korea University)
Kim, Jae Eun (Department of Materials Science and Engineering, Korea University)
Bae, Soohyun (Department of Materials Science and Engineering, Korea University)
Kang, Yoonmook (KU KIST Green School, Graduated school of Energy and Environment, Korea University)
Lee, Hae-Seok (KU KIST Green School, Graduated school of Energy and Environment, Korea University)
Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
Publication Information
Current Photovoltaic Research / v.5, no.2, 2017 , pp. 63-67 More about this Journal
Abstract
Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.
Keywords
$Al_2O_3$; Atomic Layer Deposition; Passivation; Crystalline silicon; Solar cells;
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