• Journal of Korean Society on Water Environment
• /
• v.20 no.2
• /
• pp.104-109
• /
• 2004

Removal of nutrients from domestic sewage or industrial wastewater is needed to protect surface waters from eutrophication. This research was carried out to remove the nitrogen (N) and phosphorus (P) from the wastewater using the iron oxide obtained from the steel industry and the natural zeolite, respectively. This research was conducted in both batch and continuous systems. The removal efficiency of the nutrients was evaluated in the batch system using the varying concentrations of zeolite and iron oxide added. The removal efficiency of N was 60% at the 8g of zeolite added. In the same condition, the removal efficiencies of N were 76% and 82% at 12g and 16g of zeolite added, respectively. Removal efficiency of P was 80% as 8g of iron oxide was added. The removal efficiency of P was correspondingly increased as the concentration of iron oxide was increased. Continuous column system was also used to evaluate the removal efficiency of N and P by the addition of zeolite and ferric oxide, respectively. Removal efficiencies of N were compared in the mixed packing, two stage, and four stage columns, respectively. The removal efficiencies (80%) of N in the separate packed columns (two and four stages) were higher than the mixed packing column (400%) after 90 hr. Whereas, the removal efficiencies of P were similar to each other in the three columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05a
• /
• pp.27-31
• /
• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly(N-vinylcarbazole)(PVK), 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT), N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4, 4'-diarnine(TPD) and poly(3-hexylthiophene)(P3HT). To improve the external quantum efficiency of EL devices, we added the functional layer to the devices such as LiF insulating layer, carrier confinement layer(BBOT) and hole injection layer(CuPc). In the ITO/emitting layer/Al device, the maximum quantum efficiency at 15V was $1.88{\times}10^{-5}%$. And then, it is increased by a factor of 27 to $5.2{\times}10^{-3}%$ in ITO/CuPc/emitting layer/BBOT/LiF/Al device at 15V.

• Nuclear Engineering and Technology
• /
• v.35 no.3
• /
• pp.234-242
• /
• 2003

The full energy peak efficiency of a hyper pure germanium (HPGe) detector was calibrated in a wide energy range from 0.06 to 11 MeV. Both the experimental technique and the Monte Carlo method were used for the efficiency calibration. The measurement was performed using the standard radioisotopes in the low energy region of $60{\sim}1408$ keV, which was further extended up to 11 MeV by using the $^{14}N(n,r)\;and\;^{35}Cl(n,r)$ reactions. The GEANT Monte Carlo code was used for efficiency calculation. The calculated efficiency had the same dependency on the r-ray energy with the measurement, and the discrepancy between the calculation and the measurement was minimized by fine-tuning of the detector geometry. From the calculated result, the efficiency curve of the HPGe detector was reliably determined particularly in the high energy region above several MeV, where the number of measured efficiency points is relatively small despite the wide energy region. The calculated efficiency agreed with the measurement within about $7\%$. In addition to the efficiency calculation, the origin of the local minimum near 600 keV on the efficiency curve was analyzed as a general characteristics of a HPGe detector.

• Journal of dental hygiene science
• /
• v.8 no.3
• /
• pp.109-115
• /
• 2008

Two t-amines, N,N-dimethylaniline (MA), N,N-dimethyl-p-toluidine (MPT), were investigated as new visible light amine initiators for a dental resin composite of UDMA in order to improve photopolymerization effect. Three t-amines mixed with three photosensitizers, camphorquinone(CQ), 1-phenyl-1,2-propane dione(PD) and diacetyl (DA), respectively. And then this mixtures are added to resin monomer, UDMA. Photopolymerization efficiency of UDMA was studied through the use of FT-IR absorption spectroscopy. The photopolymerization effect of amine initiators were compared with that of 4-(dimethylamino)ethyl methacrylate (AEM), the most widely used photoinitiator. The photopolymerization efficiency of UDMA containing the amine initiator increased with irradiation time. The relative polymerization efficiency containing the CQ photosensitizer increase was in the order: AEM < MPT < MA. And the relative polymerization efficiency containing the PD photosensitizer increase was in the order: MPT < AEM < MA. This result shows that MA is most efficient amine initiator with CQ and PD.

• Journal of the Korean Applied Science and Technology
• /
• v.16 no.4
• /
• pp.307-311
• /
• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.3
• /
• pp.201-206
• /
• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• Journal of Environmental Health Sciences
• /
• v.29 no.3
• /
• pp.59-64
• /
• 2003

This study was conducted to investigate anoxic-RBC-anoxic-RBC process and its application to remove biologically organics and nitrogen. BOD and total-nitrogen(T-N) removal efficiencies were decreased as volumetric loading rate increased. But, the removal efficiency changes of T-N were little, as compared to BOD. Increase of internal recycle rate had few affect of BOD and T-N removal rates. Also, influent allocation(to 2nd anoxic reactor) had few affect of BOD removal efficiency rate. However, when the influent allocation rate was 30%, T-N removal efficiency was increased to 84.1 %. BOD/N ratio applied to 2nd anoxic reactor was increased to range of 3.65-4.37 as influent allocation rate increased to range 20∼35%. But, it might also cause adverse effect such as decrease of denitrification rate in excessive influent allocation rate.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.4
• /
• pp.297-304
• /
• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.25 no.5
• /
• pp.412-419
• /
• 2020

In this study, a 70 W buck converter using GaN metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. This converter exhibits over 97 % efficiency, high power density, and 48 V-to-12 V/1.2 V/1 V (triple output). Three gate drivers and six GaN MOSFETs are placed in a 1 ㎠ area to enhance power density and heat dissipation capacity. The theoretical switching and conduction losses of the GaN MOSFETs are calculated. Inductances, capacitances, and resistances for the output filters of the three buck converters are determined to achieve the desired current, voltage ripples, and efficiency. An equivalent circuit model for the thermal analysis of the proposed triple-output buck converter is presented. The junction temperatures of the GaN MOSFETs are estimated using the thermal model. Circuit operation and temperature analysis are evaluated using a circuit simulation tool and the finite element analysis results. An experimental test bed is built to evaluate the proposed design. The estimated switch and heat sink temperatures coincide well with the measured results. The designed buck converter has 130 W/in³ power density and 97.6 % efficiency.

• Nuclear Engineering and Technology
• /
• v.53 no.4
• /
• pp.1284-1288
• /
• 2021

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (J_SC) and opencircuit voltage (V_OC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The J_SC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of J_SC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.