• Journal of the Semiconductor & Display Technology
• /
• v.19 no.4
• /
• pp.99-104
• /
• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.44 no.1
• /
• pp.44-48
• /
• 1999

Uptake, assimilation and translocation of nitrogen and dry matter assimilation and translocation in ten rice cultivars were observed in no-till direct-sown rice-vetch cropping system. There was a large degree of variation in N-uptake, grain yield, nitrogen translocation efficiency and dry matter assimilation and translocation in tested rice cultivars. Forty kg N/ha base, as compound fertilizer (21-17-21% of N-P-K) three weeks after sowing and 30 kg N/ha top-dressed at panicle initiation stage as in the form of (NH$_4$)$_2$$CO_2$ was applied. ‘Newbounet’, ‘Daesanbyeo’, and ‘Hwayeongbyeo’ showed higher translocation efficiency. The contribution of pre-heading dry matter assimilates to grain ranged from 33% to 99% of dry grain weight. Dry matter of ‘Calrose 76’ was lower than Newbounet but N content was higher in Calrose 76 than Newbonnet. By maturity, N content in vegetative parts declined considerably more than dry matter, vegetative and reproductive parts, N translocation efficiency, and N harvest index. Nitrogen translocation efficiency was greater in ‘Nonganbyeo’, Daesanbyeo, and Newbounet. Grain N concentration was positively correlated with N concentration or N content of the vegetative parts at heading in Nonganbyeo, ‘Dasanbyeo’, ‘Dongjinbyeo’, and Newbonnet. These results indicated that the greater amount of dry matter and N accumulated before heading stage, the higher translocation rates of dry matter to grain and the greater net losses at maturity.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.21-21
• /
• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.414-414
• /
• 2009

나노스피어 리소그래피는 기존의 리소그래피 방법에 비해 나노 크기 패턴을 제작하는데 공정이 간단하며 재현성있게 대면적에 패터닝이 가능하다는 장점이 있다. 본 연구에서는 Vertical LED(V-LED)의 External quantum efficiency 향상을 위하여 나노스피어 리소그래 피를 이용하여 V-LED의 n-GaN 표면을 패터닝을 하였다. n-GaN 위에 Sputter를 이용하여 $SiO_2$를 증착 후 나노스피어를 스핀 코팅을 이용하여 단일막을 형성하였다. 그 후, 반응성 이온 식각 장치를 이용하여 나노스피어의 크기를 조절하고 $SiO_2$층을 식각하였다. 다음과 같은 공정 후 $SiO_2$층을 Mask층으로 하여 n-GaN 표면을 식각하였다. 실험 결과 나노스피어 리소그래피를 이용하여 V-LED의 External quantum efficiency 향상을 위한 n-GaN 표면의 패턴 제작이 가능함을 확인할 수 있었다.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.20 no.1
• /
• pp.65-71
• /
• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• Journal of Environmental Health Sciences
• /
• v.37 no.1
• /
• pp.64-72
• /
• 2011

This study was performed to assess the removal efficiency on nitrogen, phosphorus and organic carbon in wastewater by spatial separation and internal recycling in a modified oxidation ditch process (modified OD). The performances of the modified OD were evaluated via laboratory-scale experiments. The process was operated at hydraulic retention times of 6-48 hours and solid retention times of 17-38 days. We found that organic carbon removal efficiency increased after the modified OD operation period. T-N removal efficiency remained stable; average T-N concentration of effluent was 8.02 mg/l after modified OD operation. In contrast, T-P concentration of effluent was over 1 mg/l. Nitrogen and phosphorus removal efficiency of modified OD at HRT 12 hr were 83.1% and 74.1%, respectively. Also, maximum efficiency was found at SRTs from 20 to 30 days. T-N removal efficiency was 83.1% at a C/N ratio from 3.0 to 3.5. However, T-N removal efficiency decreased at C/N ratios over 3.5. Also, T-P removal efficiency increased with HRT at C/P ratios in the same condition. Maximum efficiency was 74.1% at a C/P ratio from 25 to 28. T-N removal efficiency was 79.2% and T-P removal efficiency was 65.3% after M4 mode operation (added to the internal recycle line connected to the anoxic reactor). The modified OD with spatial separation and internal recycling developed in this study is, therefore, believed to be an improvement for solving problems in the nutrient removal technologies.

• The Korean Journal of Applied Statistics
• /
• v.26 no.1
• /
• pp.119-130
• /
• 2013

A system with $n$ components which functions when at least ${\kappa}$ of the components function is called ${\kappa}$-out-of-$n$ system. Most studies on ${\kappa}$-out-of-$n$ system derive the system reliability based on the assumption that the system has just two states: functioning or failed. However, the system efficiency may depend on the number of functioning components. This paper considers a Multi-state ${\kappa}$-out-of-$n$ system and derives the total system efficiency. In addition, assuming that the system is repairable, the optimal repair policy to maximize the system efficiency is studied. The system efficiency considered in this paper can be regarded as a generalized measure of the mean time to the failure of the system.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.2
• /
• pp.70-73
• /
• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.49-54
• /
• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• Journal of Environmental Health Sciences
• /
• v.23 no.1
• /
• pp.50-54
• /
• 1997

The removal efficiency of nutrient was investicated by using Glycine max Meer seedling. After budding, Glycine max Merr was raised at darkness for 4 days. During cultivation, the removal efficiency of $NO_2-N+NO_3-N$ was up to 90% with initial concentration of 20-100 ppm. The removal efficiency of PO$_4$-P was up to 80% with initial concentration at 30 ppm, but it was down to 22% and 27% at 40 ppm and 50 ppm. When the removal efficiency of nutrient was compared with alternating 12 hours' light and darkness, the removal efficiency of NO$_2$-N + NO$_3$-N was up to 90% at below 60 ppm. It was not different from each other. But it was particularly low about 62% and 34% at 80 ppm and 100 ppm in alternating 12 hours' light. The removal efficiency of PO$_4$-P was low at alternating 12 hours' light between 10-50 ppm on the whole range. The neutralizing capacity of pH was shown in acidity and alkalinity except strong acidity(below pH 3). The initial pH was neutralized at 6.0-7.7 of pH after 4 days. Particularly, Glycine max Meer seedling that was difference from other water plants, was shown the neutralizing capacity in strong alkalinity.