Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study A on Internal Loss Characteristics and Efficiency Improvement of Low Power Flyback Converter Using WBG Switch

WBG 스위치를 적용한 소용량 플라이백 컨버터의 내부손실 특성과 효율 개선에 관한 연구

  • Ahn, Tae Young (Department of Electronic Engineering, Cheongju University) ;
  • Yoo, Jeong Sang (Department of Electronic Engineering, Cheongju University)
  • 안태영 (청주대학교 전자공학과) ;
  • 유정상 (청주대학교 전자공학과)
  • Received : 2020.12.11
  • Accepted : 2020.12.15
  • Published : 2020.12.31
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Abstract

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

Keywords

References

  1. J. S. Yoo, T. Ahn, G. Yu, J. Lee and J. Lee, "A study on novel active clamp snubber applied DC-DC quasi resonant flyback converter to effectively reduce switch voltage surge," ICEMS, 2017, pp. 1-5.
  2. T. Ahn. "A Study on Switching Characteristics of Active Clamp Type Flyback Converter with Synchronous Rectifier Driving Signals Controlling Auxiliary Switch," Journal of The Korean Society of Semiconductor & Display Technology, vol. 17, no. 3, pp.21-26, 2018.
  3. T. Ahn. "A Study on Quasi Resonant Converter with Low Switching Surge Voltage Characteristics by Applying Auxiliary Winding Type Active Snubber," Journal of The Korean Society of Semiconductor & Display Technology, vol. 17, no. 4, pp.56-61, 2018.
  4. S. Xu, C. Wang, Q. Qian, J. Zhu, W. Sun and H. Li, "A single-switched high-switching-frequency quasi-resonant flyback converter with zero-current-switching and valley-switching," 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, pp. 2123-2127, 2019.
  5. G. Mauromicale et al., "Si and GaN Devices in Quasi Resonant Flyback converters for Wall Charger Applications," 2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, MD, USA, pp. 3253-3258, 2019.
  6. Minggang Chen, Shen Xu, Linlin Huang, Weifeng Sun, "An Improved Peak Current Control Method for GaN-based Active-clamped Flyback Converter", Industrial Electronics Society (IECON) 2020 The 46th Annual Conference of the IEEE, pp. 3654-3659, 2020.
  7. Sung Hoon Lee, Myung-Sik Son, "5.8GHz 25W Microwave Wireless Power Transmission System Development and Measurement," Journal of The Korean Society of Semiconductor & Display Technology, vol. 18, no. 1, pp.21-24, 2019.