• Journal of Periodontal and Implant Science
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• v.39 no.4
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• pp.385-390
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• 2009

Purpose: In this study we evaluated the morphologic aspects of defects created by a piezoelectric ultrasonic scaler with scaler tip on casting gold alloy using scanning electron microscope (SEM) images and defect surface profiles. Methods: 54 blocks of type III casting gold alloy (Firmilay, Jellenko Inc, CA, USA) were scaled by a piezoelectric ultrasonic scaler (P-MAX, Satelec, France) with scaler tip (No. 1 tip) on a sledge device. 2-dimensional profiles of defects on all samples were investigated by a surface profilometer (a-Step 500, KLA-Tencor, CA, USA). The selected working parameters were lateral force (0.5 N, 1.0 N, 2.0 N), mode (P mode, S mode), and power setting (2, 4, 8). SEM images were obtained. Defect surface profiles were made on Microsoft Excel program using data obtained by a surface profilometer. Results: Among P mode samples, there were similarities on defect surface profiles and SEM images regardless of lateral force. The defects created in P mode were narrow and shallow although the depth and the width increased as power setting changed low (2) to high (8). In P mode samples, the defect depth was the greatest when lateral force of 0.5 N was applied. However all the depths were smaller than 1 m. SEM images of Lateral force of 0.5 N, S mode, power setting 2 and 4 were similar to that of P mode, but the other SEM images of S mode showed discernible changes. Defect depth of S mode samples was the greatest when lateral force of 1.0 N was applied. Conclusions: Within the limitations of this study, it can be concoluded that removing capability of piezoelectric scaler with scaler tip becomes maximized as power level becomes higher but the capability is restricted when excessive lateral force is applied on scaler tip.

• Journal of Periodontal and Implant Science
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• v.42 no.2
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• pp.50-58
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• 2012

Purpose: This study evaluated histologically the tissue responses to and the effects of a customized nano-hydroxyapatite (n-HA) block bone graft on periodontal regeneration in a one-wall periodontal-defect model. Methods: A customized block bone for filling in the standardized periodontal defect was fabricated from prefabricated n-HA powders and a polymeric sponge. Bilateral $4{\times}{\times}4{\times}5$ mm (buccolingual width${\times}$mesiodistal width${\times}$depth), one-wall, critical-size intrabony periodontal defects were surgically created at the mandibular second and fourth premolars of five Beagle dogs. In each dog, one defect was filled with block-type HA and the other served as a sham-surgery control. The animals were sacrificed following an 8-week healing interval for clinical and histological evaluations. Results: Although the sites that received an n-HA block showed minimal bone formation, the n-HA block was maintained within the defect with its original hexahedral shape. In addition, only a limited inflammatory reaction was observed at sites that received an n-HA block, which might have been due to the high stability of the customized block bone. Conclusions: In the limitation of this study, customized n-HA block could provide a space for periodontal tissue engineering, with minimal inflammation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.291-293
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• 2000

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

• Journal of Korea Multimedia Society
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• v.15 no.9
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• pp.1149-1155
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• 2012

In this paper, we propose cause diagnosis method of semiconductor defects from semiconductor industrial images. Our method constructs feature database (DB) of defect images. Then, defect and input images are subdivided by uniform block. And the block similarity is measured using histogram kai-square distance after color histogram calculation. Then, searched blocks in each image are merged into connected objects using clustering. Finally, the most similar defect image from feature DB is searched with the defect cause by measuring cluster similarity based on features of each cluster. Our method was validated by calculating the search accuracy of n output images having high similarity. With n = 1, 2, 3, the search accuracy was measured to be 100% regardless of defect categories. Our method could be used for the industrial applications.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.94-97
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• 2009

Cast defect in large steel ingots are estimated in quality and compared each other cast conditions on simulation results by now. The cast defects, micro-crack, shrinkage, pin hole which are predictable in simulation with a reasonable accuracy. In this study, 15 ton steel ingot casting was simulated for solidification model and cast defect prediction. And the real cast was carried out in a foundry for the compeer to the simulation results, the cast defect prediction. Also, the quantity of predicted defect was tried to measuring with the defect mach counting for the various simulated cast conditions. The defect quantity work was used to find the optimized cast condition in DOE(design of experiment) procedure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.23-29
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• 2010

This paper presents a method for constructing a memory system using defective memory chips comprising faulty storage blocks. The three-dimensional memory system introduced here employs a die-stacked structure of faulty memory chips. Signals lines passing through the through-silicon-vias (TSVs) connect chips in the defect tolerant structure. Defective chips are classified into several groups each group comprising defective chips having faulty blocks at the same location. A defect tolerant memory system is constructed using chips from different groups. Defect-free storage blocks from spare chips replace faulty blocks using additional routing circuitry. The number of spare chips for defect tolerance is $s={\ulcorner}(k{\times}n)/(m-k){\urcorner}$ to make a system defect tolerant for (n+s) chips with k faulty blocks among m independently addressable blocks.

• Journal of Periodontal and Implant Science
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• v.30 no.2
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• pp.429-442
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• 2000

Based on current evidence in the literature, it is known that endotoxin is a weakly adherent surface phenomenon and that power-driven instruments can be used to accomplish definitive root detoxification and maximal wound healing without overinstrumentation of root and without extensive cementum removal. And one of the newly developed curette tips used with low power of piezoelectric ultrasonic scaler, is effective to remove calculus and not to remove the excessive cementum. The purpose of this study is therefore, to assess the influence of ultrasonic power and various working parameters on root substitute removal when instrumentation is performed with the curette tip on piezoelectric ultrasonic scaler. This study assessed defect depth, width and area resulting from instrumentation using a piezoelectric ultrasonic scaler with a curette type tip in vitro to acrylic resin block as a root substitute. The working parameters was standardized by the sledge device which controls lateral force(0.5 N, 1 N, 2 N) and instrumentation time(5 sec, 10 sec, 20 sec) and power setting was adjusted 0,2,4,8 in P mode. Power setting had the greatest influence on defect depth compared to lateral force and instrumentation time(standardized regression parameter estimates${\pm}$standard error, $0.37{\pm}0.02$, $0.19{\pm}0.02$, $0.07{\pm}0.02$). The effects on defect area also greatest for power setting($0.57{\pm}0.03$) compared to lateral force and instrumentation time($0.33{\pm}0.03$, $0.12{\pm}0.03$). The effect of the power setting on the defect width($0.15{\pm}0.01$) is not so great as defect depth or defect area compared to lateral force($0.12{\pm}0.01$) and effect of instrumentation time is minimal($0.02{\pm}0.01$). It could be concluded that the power setting has the greatest influence on the defect depth and area in curette type tip with low power of piezoelectric ultrasonic device. Many parameters can be adjusted in various situation in clinical use of piezoelectric ultrasonic scaler but the power setting is the first parameter to be adjusted.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Journal of Life Science
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• v.20 no.8
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• pp.1207-1213
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• 2010

The purpose of this study was to evaluate the effect of porcine cancellous bone as a scaffold in a rat calvarial defect model. Critical-sized defects were created in 30 male Sprague-Dawley rats. The animals were divided into critical defect (CD, n=10), $\beta$-tricalcium phosphate (TCP) graft (BT, n=10) and porcine cancellous bone graft (PCB, n=10) groups. Each defect was filled with $\beta$-TCP mixed with fibrin glue or porcine cancellous bone powder mixed with fibrin glue. In the CD group, the defect was left empty. All rats were sacrificed at 8 weeks after bone graft surgery, and bone formation was evaluated by gross observation, plain radiography, micro-computed tomography scanning and histological evaluation. Repair of bone defect was the least in the CD group, and significant new bone formation was observed in the PCB group. Grafting of porcine cancellous bone was more efficient for regenerating new bone than grafting $\beta$-TCP.