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Characteristics of Graphene Quantum Dot-Based Oxide Substrate for InGaN/GaN Micro-LED Structure  

Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.3, 2021 , pp. 167-171 More about this Journal
Abstract
The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.
Keywords
InGaN; Nanowires; Multi Quantum Wells; Core-shell; Micro-Light-emitting Diodes;
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