Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Characteristics of Graphene Quantum Dot-Based Oxide Substrate for InGaN/GaN Micro-LED Structure

InGaN/GaN Micro-LED구조를 위한 그래핀 양자점 기반의 산화막 기판 특성

  • Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
  • 황성원 (상명대학교 시스템반도체공학과)
  • Received : 2021.09.07
  • Accepted : 2021.09.16
  • Published : 2021.09.30
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Abstract

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

Keywords

References

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