• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Communications of the Korean Mathematical Society
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• v.39 no.2
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• pp.331-343
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• 2024

Let ℜ be a *-algebra with unity I and a nontrivial projection P₁. In this paper, we show that under certain restrictions if a map ψ : ℜ → ℜ satisfies $$\Psi(S_1{\diamond}S_2{\cdot}{\cdot}{\cdot}{\diamond}S_{n-1}{\bullet}S_n)=\sum_{k=1}^nS_1{\diamond}S_2{\diamond}{\cdot}{\cdot}{\cdot}{\diamond}S_{k-1}{\diamond}{\Psi}(S_k){\diamond}S_{k+1}{\diamond}{\cdot}{\cdot}{\cdot}{\diamond}S_{n-1}{\bullet}S_n$$ for all S_n-2, S_n-1, S_n ∈ ℜ and S_i = I for all i ∈ {1, 2, . . . , n - 3}, where n ≥ 3, then ψ is an additive *-derivation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Journal of the Korean Society of Costume
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• v.62 no.3
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• pp.84-95
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• 2012

The purpose of this study is to provide basic data reflecting body characteristics for production of briefs by classifying lower body types of women in their 40s, 50s and 60s. The results are as follows: First, measurements for height-related items decreased while the measurements for width and depth items increased with age. However, 'hip width' and 'hip depth' items showed no significant differences among the age groups. In addition, no visible differences appeared in the length items among the age groups but 'waist to hip' and 'outside leg' lengths showed decreasing values according to age. Second, four factors were established from the factor analysis: 'obesity level around waist and abdomen', 'vertical length of the lower body', 'thickness and obesity level of lower limbs', and, 'size and shape of buttocks'. Lastly, cluster analysis resulted in the classification of the four factors mentioned above. Type 2 appeared the most, representing women in their 40s~60s. Type 1(n=257) was referred as 'slender with a short lower body', Type 2(n=443) as 'plump with short lower body', Type 3(n=224) as 'slender with long lower body', and Type 4(n=199) as 'obese around abdomen and lower limbs'.

• BMB Reports
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• v.40 no.5
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• pp.825-831
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• 2007

Tumor cell invasion and metastasis are often associated with matrix metalloproteinases (MMPs), among which MMP-2 and MMP-9 are of central importance. We previously showed that H-Ras, but not N-Ras, induced invasion of MCF10A human breast epithelial cells in which the enhanced expression of MMP-2 was involved. MMP-2 is produced as a latent pro-MMP-2 (72 kDa) to be activated resulting the 62 kDa active MMP-2. The present study investigated if H-Ras and/or N-Ras induces pro-MMP-2 activation of MCF10A cells when cultured in two-dimensional gel of type I collagen. Type I collagen induced activation of pro-MMP-2 only in H-Ras MCF10A cells but not in N-Ras MCF10A cells. Induction of active MMP-2 by type I collagen was suppressed by blocking integrin ${\alpha}2$, indicating the involvement of integrin signaling in pro-MMP-2 activation. Membrane-type (MT)1-MMP and tissue inhibitor of metalloproteinase (TIMP)-2 were up-regulated by H-Ras but not by N-Ras in the type I collagen-coated gel, suggesting that H-Ras-specific up-regulation of MT1-MMP and TIMP-2 may lead to the activation of pro-MMP-2. Since acquisition of pro-MMP-2 activation can be associated with increased malignant progression, these results may help understanding the mechanisms for the cell surface matrix-degrading potential which will be crucial to the prognosis and therapy of breast cancer metastasis.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• The Journal of the Korea Contents Association
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• v.19 no.6
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• pp.450-460
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• 2019

This study analyzed the culinary arts major students' subjective perception toward capstone design subject which was thought by team teaching method through applying Q methodology. Generating future suggestions of the operation of the subject and finding common structure of students's responses are the main aim of this study. From the typological analysis, four types of common structures were found. There were Differentiation Curriculum Satisfaction Type(Type 1, N=14), Restaurant business plan Type(Type 2, N=5), Prefer franchise education Type(Type 3, N=3), Prefer menu development lesson Type(Type 4, N=3) and each type showed its own distinctive characteristics. In the future research, additional literature research and empirical study will be applied for adjusting and developing more sophisticate questions of Q methodology and analysing process for gathering diverse responses and specific analysis.

• Communications of the Korean Mathematical Society
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• v.16 no.4
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• pp.679-690
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• 2001

Doubly stochastic matrices are n$\times$n nonnegative ma-trices whose row and column sums are all 1. Convex polytope $\Omega$$_{n}$ of doubly stochastic matrices and more generally (R,S), so called transportation polytopes, are important since they form the domains for the transportation problems. A theorem by Birkhoff classifies the extremal matrices of , $\Omega$$_{n}$ and extremal matrices of transporta-tion polytopes (R,S) were all classified combinatorially. In this article, we consider signed version of $\Omega$$_{n}$ and (R.S), obtain signed Birkhoff theorem; we define a new class of convex polytopes (R,S), calculate their dimensions, and classify their extremal matrices, Moreover, we suggest an algorithm to express a matrix in (R,S) as a convex combination of txtremal matrices. We also give an example that a polytope of signed matrices is used as a domain for a decision problem. In this context of finite reflection(Coxeter) group theory, our generalization may also be considered as a generalization from type $A_{*}$ n/ to type B$_{n}$ D$_{n}$. n/.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• Water for future
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• v.15 no.2
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• pp.33-39
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• 1982

For the determination of a reservoir capacity Rippl's mass-curve method has long been used with the past river flow data assuming the same flow records will be repeated in the future. In this study the synthetic generation methods of thomas-Fiering type and harmonic analysis were used to synthetically generate 50 years of monthly river inflows to three single-purpose reservoris(Chuncheon, Chungpyong, Hwacheon) and three multi-purpose reservoirs(Soyany, Andon, Daichung). The generated sequences of monthly flows were analyzed based on the range concept, and hence the so-determined ranges for single-prupose and multi-purpose rewervoirs were correlated with the number of monthly flow subseries, resulting an empirical equation of the Feller's type. (1) Single-purpose reservoir $$R_n=2.8357 I\sqrt{n}$$ (2) Multi-purpose reservoir $$R_n=2.5145 I\sqrt{n}$$ where, $R_n$:Range(㎥/S-M) n:periodic(12 months, ……120 months) I:Input mean(㎥/S-M) In Korea, the monthly inflow data generation will be fit to the Thomas-Fiering type, and this paper shows that the periodic range is easily calculated without the Rippl's mass-curve method as shown above formula.