• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.17-17
• /
• 2010

We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

• Journal of Magnetics
• /
• 제17권2호
• /
• pp.78-82
• /
• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 제38회 하계학술대회
• /
• pp.1301-1302
• /
• 2007

The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1526-1528
• /
• 1996

The dielectric reliability of a polycrystalline and a multilayered $BaTiO_3$ thin films was evaluated using a time-zero dielectric breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB) techniques. The $BaTiO_3$ thin films were prepared by rf-magnetron sputtering technique on ITO-coated glass substrates. In case of the multilayered $BaTiO_3$ thin film, the dielectric breakdown histogram, which was obtained from the TZDB measurements, showed a typical Weibull distribution. While in case of polycrystalIine $BaTiO_3$ thin film, a randomly distributed dielectric breakdown histogram was observed. The TDDB results of the multilayered $BaTiO_3$ thin film guaranteed about $10^5$ hours-operation under the stress field of 1 MV/cm.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.732-734
• /
• 1998

Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

• Journal of Magnetics
• /
• 제19권2호
• /
• pp.121-125
• /
• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• Corrosion Science and Technology
• /
• 제12권3호
• /
• pp.119-124
• /
• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• ETRI Journal
• /
• 제37권6호
• /
• pp.1135-1142
• /
• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• Transactions on Electrical and Electronic Materials
• /
• 제15권5호
• /
• pp.257-261
• /
• 2014

Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

• 한국자기학회지
• /
• 제6권3호
• /
• pp.170-173
• /
• 1996

3-gun 마그네트론 스퍼터 장치로 Co-Zr 다층 박막을 제작하여 저온 비정질화를 시도하였다. 박막 x-ray와 단면 투과 전자현미경 분석에 의해 지르코늄 층이 코발트의 확산에 의해 비정질화 됨과 그의 위쪽 계면의 지르코늄 비정질화 속도가 아래쪽 계면의 그것보다 두 내지 세배 빠른 것을 발견하였다. 이 현상은 스퍼터링 중의 분자 섞임으로 설명되었다.