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http://dx.doi.org/10.4313/TEEM.2014.15.5.257

Electrochemical Characterization of Multilayered CdTe/PSS Films Prepared by Electrostatic Self-assembly Method  

Rabbani, Mohammad Mahbub (Department of Chemistry, Inha University)
Yeum, Jeong Hyun (Department of Bio-Fibers and Materials Science, Kyungpook National University)
Kim, Jungsoo (Energy Component and Material R&BD Group, Korea Institute of Industrial Technology)
Nam, Dae-Geun (Energy Component and Material R&BD Group, Korea Institute of Industrial Technology)
Oh, Weontae (Department of Materials and Components Engineering, Dong-Eui University)
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.5, 2014 , pp. 257-261 More about this Journal
Abstract
Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).
Keywords
CdTe; Self-assembly; Thin film; Cyclic voltammetry;
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1 G. Decher, Science, 277, 1232 (1997). [DOI: http://dx.doi.org/10.1126/science.277.5330.1232].   DOI   ScienceOn
2 M. Y. Gao, C. Lesser, S. Kirstein, and H. Mohwald, J. Appl. Phys., 87, 2297 (2000). [DOI: http://dx.doi.org/10.1063/1.372177].   DOI   ScienceOn
3 M. Y. Gao, B. Richter, S. Kirstein, and H. Mohwald, J. Phys. Chem. B, 102, 4096 (1998). [DOI: http://dx.doi.org/10.1021/jp980620a].   DOI   ScienceOn
4 J. H. Fendler and F. C. Meldrum, Adv. Mater., 7, 607 (1995). [DOI: http://dx.doi.org/10.1002/adma.19950070703].   DOI   ScienceOn
5 G. Decher, Y. Lvov, and J. Schmitt, Thin Solid Films, 244, 772 (1994). [DOI: http://dx.doi.org/10.1016/0040-6090(94)90569-X].   DOI   ScienceOn
6 X. Zhang, M. Gao, X. X. Kong, Y. P. Sun, and J. C. Shen, J. Chem. Soc. Chem. Commun., 1055 (1994). [DOI: http://dx.doi.org/10.1039/c39940001055].   DOI
7 A. Wu, J. Lee, and M. F. Rubner, Thin Solid Films, 329, 663 (1998). [DOI: http://dx.doi.org/10.1016/S0040-6090(98)00736-6].   DOI   ScienceOn
8 T. M. Copper, A. L. Campbell, and R. L. Grane, Langmuir, 11, 2713 (1995). [DOI: http://dx.doi.org/10.1021/la00007a061].   DOI   ScienceOn
9 M. Y. Gao, B. Richter, and S. Kirstein, Adv. Mater., 9, 802 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970091007].   DOI   ScienceOn
10 J. Schmitt, G. Decher, W. J. Dressick, S. L. Brandow, R. E. Geer, R. Shashidhar, and J. M. Calvert, Adv. Mater., 9, 61 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970090114].   DOI   ScienceOn
11 J. H. Burroughes, D.D.C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature, 347, 539 (1990). [DOI: http://dx.doi.org/10.1038/347539a0].   DOI
12 M. Herold, J. Gmeiner, and M. Schwoerer, Acta. Polym., 45, 392 (1994). [DOI: http://dx.doi.org/10.1002/actp.1994.010450511].   DOI   ScienceOn
13 F. Garten, A. Hiberer, F. Cacialli, E. Esselink, and Y. Dam, Adv. Mater., 9, 127 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970090206].   DOI   ScienceOn
14 H. Hong, D. Davidov, M. Tarabia, H. Chayet, I. Benjiamin, E. Z. Faraggi, Y. Avny, and R. Neumann, Synth. Met., 85, 1265 (1997). [DOI: http://dx.doi.org/10.1016/S0379-6779(97)80233-0].   DOI   ScienceOn
15 H. Mattoussi, L. H. Radzilowski, B. O. Dabbousi, E. L. Thomas, M. G. Bawendi, and M. F. Rubner, J. Appl. Phys., 83, 7965 (1998). [DOI: http://dx.doi.org/10.1063/1.367978].   DOI   ScienceOn
16 Y. Yang, S. Xue, S. Liu, J. Huang, and J. C. Shen, Appl. Phys. Lett., 69, 377 (1996). [DOI: http://dx.doi.org/10.1063/1.118066].   DOI   ScienceOn
17 B.O. Dabbousi, M. G. Bawendi, O. Onitsuka, and M.F. Rubner, Appl. Phys. Lett., 66, 1316 (1995). [DOI: http://dx.doi.org/10.1063/1.113227].   DOI   ScienceOn
18 M. C. Schlamp, X. Peng, and A. P. Alivisatos, J. Appl. Phys., 82, 5837 (1997). [DOI: http://dx.doi.org/10.1063/1.366452].   DOI   ScienceOn
19 V. L. Colvin, M. C. Schlamp, and A. P. Alivisatos, Nature, 370, 354 (1994). [DOI: http://dx.doi.org/10.1038/370354a0].   DOI   ScienceOn
20 M. M. Rabbani, J. S. Bae, D. Kim, C. H. Ko, D. G. Nam, Y. Kim, J. H. Yeum, and W. Oh, J. Nanosci. Nanotechnol., 11, 6453 (2011). [DOI: http://dx.doi.org/10.1166/jnn.2011.4427].   DOI
21 M. M. Rabbani, D. Kim, H. C. Kim, C. H. Ko, D. G. Nam, Y. M. Yu, Y. D. Park, and W. Oh, Met. Mater. Int., 17, 227 (2011). [DOI: http://dx.doi.org/10.1007/s12540-011-0407-6].   DOI   ScienceOn
22 S. N. Sharma, H. Sharma, G. Singh, and S. M. Shivaprasad, Nucl. Instrum. Meth. B, 244, 86 (2006). [DOI: http://dx.doi.org/10.1016/j.nimb.2005.11.014].   DOI   ScienceOn
23 C. Bittencourt, A. Felten, B. Douhard, J. F. Colomer, G. V. Tendeloo, W. Drube, J. Ghijisen, and J. J. Pireaux, Surf. Sci., 601, 2800 (2007). [DOI: http://dx.doi.org/10.1016/j.susc.2006.12.045].   DOI   ScienceOn
24 S. H. Kim, W. K. Han, and J. H. Lee, Curr. Appl. Phys., 10, S481 (2010). [DOI: http://dx.doi.org/10.1016/j.cap.2010.02.054].   DOI   ScienceOn
25 C. Bitterncourt, A. Felten, B. Douhard, J. Ghijsen, R. L. Johnson, W. Drube, and J. J. Pireaux, Chem. Phys., 328, 385 (2006). [DOI: http://dx.doi.org/10.1016/j.chemphys.2006.07.041].   DOI   ScienceOn
26 M. M. Rabbani, C. H. Ko, J. S. Bae, J. H. Yeum, I. S. Kim, and W. Oh, Colloids Surface A, 336, 183 (2009). [DOI: http://dx.doi.org/10.1016/j.colsurfa.2008.11.025].   DOI   ScienceOn
27 J. Kim, M.M. Rabbani, D. Kim, M. Ree, J. H. Yeum, C. H. Ko, Y. Kim, J. S. Bae, and W. Oh, Curr. Appl. Phys., 10, S201 (2010). [DOI: http://dx.doi.org/10.1016/j.cap.2009.07.034].   DOI   ScienceOn
28 N. Alexeyeva and K. Tammeveski, Anal. Chim. Acta, 618, 140 (2008). [DOI: http://dx.doi.org/10.1016/j.aca.2008.04.056].   DOI   ScienceOn
29 M. Al-Ibrahim, H. K. Roth, M. Schroedner, A. Konkin, U. Zhokhavets, G. Gobsch, P. Scharff, and S. Sensfuss, Org. Electron., 6, 65 (2005). [DOI: http://dx.doi.org/10.1016/j.orgel.2005.02.004].   DOI   ScienceOn
30 S. W. Hwang and Y. Chen, Macromolecules, 35, 5438 (2002). [DOI: http://dx.doi.org/10.1021/ma012181a].   DOI   ScienceOn
31 M. Al-Ibrahim, A. Konkin, H. K. Rotha, D.A.M. Egbe, E. Klemm, U. Zhokhavets, G. Gobsch, and S. Sensfuss, Thin Solid Films, 474, 201 (2005). [DOI: http://dx.doi.org/10.1016/j.tsf.2004.08.188].   DOI   ScienceOn
32 W. Shockley and H. J. Queisser, J. Appl. Phys., 32, 510 (1961). [DOI: http://dx.doi.org/10.1063/1.1736034].   DOI
33 B. Lehr, M. Seufert, G. Wenz, and G. Decher, Supramol. Sci., 2, 199 (1995). [DOI: http://dx.doi.org/10.1016/0968-5677(96)89676-3].   DOI   ScienceOn
34 G. W. Lee, J. Kim, J. Yoon, J. S. Bae, B. C. Shin, I. S. Kim, W. Oh, and M. Ree, Thin Solid Films, 516, 5781 (2008). [DOI: http://dx.doi.org/10.1016/j.tsf.2007.10.071].   DOI   ScienceOn
35 S. Noach, E. Z. Faraggi, G. Cohen, Y. Avny, R. Neumann, D. Davidov, and A. Lewis, Appl. Phys. Lett., 69, 3650 (1996). [DOI: http://dx.doi.org/10.1063/1.117012].   DOI   ScienceOn