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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics

  • Lee, Su-Jae (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Hwang, Chi-Sun (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Pi, Jae-Eun (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Yang, Jong-Heon (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Byun, Chun-Won (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Chu, Hye Yong (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Cho, Kyoung-Ik (Information & Communications, Core Technology Research Laboratory, ETRI) ;
  • Cho, Sung Haeng (Information & Communications, Core Technology Research Laboratory, ETRI)
  • Received : 2014.06.22
  • Accepted : 2015.08.10
  • Published : 2015.12.01
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Abstract

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

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References

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