• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.95-96
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• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.245-249
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• 2015

Vertically coupled low density InGaAs quantum dots (QDs) buried in GaAs matrix were grown with migration enhanced molecular beam epitaxy method as a candidate for quantum information processing devices. We performed excitation power-dependent photoluminescence measurements at cryogenic temperature to analyze the effects of vertical coupling according to the variation in thickness of spacer layer. The more intense coupling effects were observed with the thinner spacer layer, which modified emission properties of QDs significantly. The low surface density of QDs was observed by atomic force microscopy, and scanning transmission electron microscopy verified the successful vertical coupling between low density QDs.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.264-264
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• 2007

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.214-217
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• 2017

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.275-282
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• 1995

III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.501-504
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• 2004

High quality GaN layer was obtained on 0001 sapphire substrate using ammonia($NH_3$) as a nitrogen source by gas source molecular beam epitaxy. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN. In-situ RHEED(reflection high electron energy diffraction) appeared streaky-like pattern. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from plane of GaN has exhibited as narrow as 8arcmin and surface roughness was 7.83nm. Photoluminescence measurement of GaN was investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. The GaN epitaxy layer according to various growth condition was investigated.

• Current Applied Physics
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• v.18 no.12
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• pp.1558-1563
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• 2018

We demonstrate improved surface pit and phase separation in thick InGaN grown on a GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium modulation technique. The formation of surface pit and compositional inhomogeneity in the InGaN epilayer are investigated using atomic force microscopy, scanning electron microscopy and temperature-dependent photoluminescence. Indium elemental mapping directly reveals that poor compositional homogeneity occurs near the pits. The indium-modulation epitaxy of InGaN minimizes the surface indium segregation, leading to the reduction in pit density and size. The phase separation in InGaN with a higher pit density is significantly suppressed, suggesting that the pit formation and the phase separation are correlated. We propose an indium migration model for the correlation between surface pit and phase separation in InGaN.