Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Surface Morphology of AlSb on GaAs Grown by Molecular Beam Epitaxy and Real-time Growth Monitoring by in situ Ellipsometry

  • Kim, Jun Young (Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University) ;
  • Lim, Ju Young (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) ;
  • Kim, Young Dong (Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University) ;
  • Song, Jin Dong (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology)
  • Received : 2017.11.10
  • Accepted : 2017.11.29
  • Published : 2017.11.30
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Abstract

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

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References

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