Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Growth of GaN on sapphire substrate by GSMBE(gas source molecular beam epitaxy) using ammonia as nitrogen source

Nitrogen source로 ammonia를 사용해 GSMBE로 성장된 GaN 박막 특성

  • Cho Hae-jong (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
  • Han Kyo-yong (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
  • Suh Young-suk (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
  • Misawa Yusuke (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University) ;
  • Park Kang-sa (Photoelectronics laboratory Department of electrical engineering and computer science. Yeungnam University)
  • 조해종 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
  • 한교용 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
  • 서영석 (영남대학교 광전자연구실, 토요하시 기술과학대학(일본)) ;
  • ;
  • Published : 2004.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

High quality GaN layer was obtained on 0001 sapphire substrate using ammonia($NH_3$) as a nitrogen source by gas source molecular beam epitaxy. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN. In-situ RHEED(reflection high electron energy diffraction) appeared streaky-like pattern. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from plane of GaN has exhibited as narrow as 8arcmin and surface roughness was 7.83nm. Photoluminescence measurement of GaN was investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. The GaN epitaxy layer according to various growth condition was investigated.

Keywords