• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_2
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• pp.919-926
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• 2021

In this paper, a study was conducted on the miniaturization of an e-Mobility battery charger module using GaN-FET. GaN-FET is one of the types of WBG devices, and it is a device that exceeds the performance of existing Si power semiconductors. In particular, GaN-FET has the advantage of small packaging size and high switching frequency operation, which is advantageous for miniaturization of power converters. Therefore, a bidirectional DC/DC converter module for e-mobility charging using GaN-FET was developed. To apply to the converter to be developed, analysis is performed on the characteristics of GaN-FET, and after manufacturing a prototype of a bidirectional DC/DC converter module, the efficiency and temperature data of the power converter are analyzed to verify its feasibility.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.39-44
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• 2004

The present paper gives a review of the recent development of a differential mobility analyzer (DMA) available for both particle size measurements and production of monodisperse particles in the nanometer range. Operating principles of a general DMA are introduced as well as characteristics of highly functional DMAs such as those capable of classifying particles in a measurement range as broad as 1-1000nm at low pressures. Some examples of DMA applications are also described.

• The Journal of the Korea Contents Association
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• v.19 no.10
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• pp.568-580
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• 2019

With mobility-as-a-service(MaaS) drawing attention to its influence and ripple effect around the world, the mobility service market is currently growing rapidly mainly focusing on mobility sharing. In order to preemptively dominate the mobility service market following the full-scale spread of MaaS, it is important to first identify the recognition and experience of users in personal mobility sharing services, which are currently in the early stages of diffusion, and through which to understand the characteristics of potential consumers of the extended mobility service market. Therefore, the study aims to classify the user types of mobility service and establish a future user experience-oriented mobility service strategy using a subjectivity study method, Q methodology.

• Journal of Korea Game Society
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• v.10 no.6
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• pp.57-65
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• 2010

In this paper, mobility performance indices are proposed which may be used to estimate characteristics of output velocity space in six-degree-of-freedom parallel mechanism. In order for manipulability and condition number to not suffer from lack of the physical meaning due to dimensional inhomogeneity, output space is partitioned into translational velocity space and rotational velocity space, respectively. In each space, mobility ellipsoids corresponding to unit input space are defined and two types of mobility performance in translational velocity spaces indices are derived. Two types of mobility performance in rotational velocity spaces indices are derived.

• Korean Institute of Interior Design Journal
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• v.24 no.4
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• pp.99-110
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• 2015

The purpose of this study is to identify pre-elderly's housing mobility related characteristics (reasons for moving, change of personal life after move, housing attachment, and plan to future move) and to examine the associations between their socio-demographic characteristics and housing characteristics, and their housing mobility related characteristics. A total of 200 usable data were collected through personal survey using a questionnaire developed by the researcher. Samples were selected in Seoul and new towns in the capital area and a survey conducted from February, 2014 to December, 2014. For the analyses, descriptive statistics, factor analysis, t-test and ANOVA were used. The most frequently mentioned reasons for moving were 'a good place for nature and retirement life'. Age, education level, liiving expenses, locaion, tenure status, and housing size were the variables to show significant difference to reasons for moving. Respondents experienced positive personal life changes after moving, especially, 'physical health' and outgoing activity'. Respondents who moved to a new town was more positively changed. Personal life changes was the most important variable associated with 3 factors of housing attachment. Location, tenure status, housing size were the major variables to show differences to housing attaachment. Also, personal life changes after moving and housing attachment were the important variables affecting a plan to future move. In other words, the respondents who do not plan to future move showed higher positive life change and strong housing attachment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.81-84
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• 2004

Required characteristics of poly-Si TFT's are investigated for the implementation of analog circuits to be integrated on System-on-Glass (SoG). Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT's are derived as a function of the resolution of display system. Effective mobility of poly-Si TFT's required for the realization of source driver is analyzed for various panel sizes.

• Journal of Information Display
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• v.5 no.4
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• pp.1-6
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• 2004

In this paper, we investigate on the characteristics of poly-Si TFTs reuired for the implementation of analog circuits to be integrated with System-on-Glass (SoG). Matching requirements in terms of resistor values, threshold voltage and mobility of poly-Si TFTs are derived as a function of the resolution of display system. Effective mobility of poly-Si TFTs required for the realization of source driver is analyzed for various panel sizes.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.