• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.741-748
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• 2010

We studied the corrosion and oxidation properties of Fe-18Cr-0.4Nb-(0.1~0.6)Ti-(1~3)Si-(0.5~2)Mo stainless steel. The resistance to general and pitting corrosion was evaluated and the results were analyzed by Response Surface Methodology (RSM) as a function of alloy composition. The effects of alloy composition and heat treatment on the oxidation resistance were also examined. Mo increased both general corrosion resistance and pitting corrosion resistance. Si improved the resistance of the alloys to pitting corrosion. Si was also beneficial for general corrosion resistance of the alloys containing Mo at more than 1 wt.%. However, Mo was detrimental when its content was lower. Effects of Ti on general corrosion properties appeared to be weak and a high concentration of Ti appeared to deteriorate pitting resistance. The thickness of the oxidation scale increased and adhesion of the scale worsened as the temperature increased from $800^{\circ}C$ to $900^{\circ}C$. Weight gain of the alloys due to oxidation at $900^{\circ}C$ clearly showed that the resistance to oxidation is improved by annealing at $860^{\circ}C$ and an increase of Si content.

• Journal of the Korean Electrochemical Society
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• v.23 no.2
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• pp.25-38
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• 2020

Photoelectrochemical water splitting has been considered as the most promising technology for generating hydrogen energy. Transition metal dichalcogenide (TMD) compounds have currently attracted tremendous attention due to their outstanding ability towards the catalytic water-splitting hydrogen evolution reaction (HER). Herein, we report the synthesis method of various transition metal dichalcogenide including MoS₂, MoSe₂, WS₂, and WSe₂ nanosheets as excellent catalysts for solar-driven photoelectrochemical (PEC) hydrogen evolution. Photocathodes were fabricated by growing the nanosheets directly onto Si nanowire (NW) arrays, with a thickness of 20 nm. The metal ion layers were formed by soaking the metal chloride ethanol solution and subsequent sulfurization or selenization produced the transition metal chalcogenide. They all exhibit excellent PEC performance in 0.5 M H₂SO₄; the photocurrent reaches to 20 mA cm^-2 (at 0 V vs. RHE) and the onset potential is 0.2 V under AM1.5 condition. The quantum efficiency of hydrogen generation is avg. 90%. The stability of MoS₂ and MoSe₂ is 90% for 3h, which is higher than that (80%) of WS₂ and WSe₂. Detailed structure analysis using X-ray photoelectron spectroscopy for before/after HER reveals that the Si-WS₂ and Si-WSe₂ experience more oxidation of Si NWs than Si-MoS₂ and Si-MoSe₂. This can be explained by the less protection of Si NW surface by their flake shape morphology. The high catalytic activity of TMDs should be the main cause of this enhanced PEC performance, promising efficient water-splitting Si-based PEC cells.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• Carbon letters
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• v.6 no.2
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• pp.71-78
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• 2005

Anti-oxidation coatings are the key technique for carbon/carbon (C/C) composites used as the thermal structural materials. The microstructure and oxidation behavior of several kinds of high-performance ceramic coatings for C/C composites prepared in Northwestern Polytechnical University were introduced in this paper. It showed that the ceramic coatings such as SiC, Si-$MoSi_2$, SiC-$MoSi_2$, $Al_2O_3$-mullite-SiC and SiC/yttrium silicate/glass coatings possessed excellent oxidation resistance at high temperatures, and some of these coatings were characterized with excellent thermal shock resistance. The SiC-$MoSi_2$ coating system has the best oxidation protective property, which can effectively protect C/C composites from oxidation up to 1973 K. In addition, the protection and failure reasons of some coatings at high temperature were also provided.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.4
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• pp.23-28
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• 2004

In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) values were investigated after 600, 700, 800 and 90$0^{\circ}C$ RTA(Rapid Thermal Annealing). Also it was found that Mo metal gate was stable up to 90$0^{\circ}C$ with underlying SiO$_2$through X-ray diffraction measurement. Sheet resistances of Mo metal gate obtained from 4-point probe were less than 10$\Omega$/$\square$ that was much lower than those of polysilicon.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.6
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• pp.558-561
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• 2004

The morphology of silica supported $MoO_{3}$ catalysts, which was prepared by impregnation of ammonium heptamolybdate(AHM) with various surface loadings up to 4 atoms $Mo/nm^{2}$, was studied using x-ray diffraction(XRD). All morphologies of silica supported $MoO_{3}$ appear to be thermodynamically driven. For high loaded catalysts there appeared three states: a sintered and well-dispersed hexagonal state at moderate temperature calcination($300^{\circ}C$), and a sintered orthorhombic state at high temperature calcination($500^{\circ}C$). Whereas the sintered orthorhombic phase is detected by XRD at loadings in excess of 1.1 atom $Mo/nm^{2}$, the well-dispersed hexagonal phase is not detected even until 4.0 $atomsMo/nm^{2}$. The higher apparent dispersion of the hexagonal phase may arise from some role of ammonia which results in a stronger $MoO_{3}-SiO_{2}$ surface interaction.

• Transactions of Materials Processing
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• v.8 no.3
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• pp.233-233
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• 1999

To investigate the effect of tungsten addition on mechanical properties, we prepared refractory (62χ)Nb-18Si-l00Mo-l0Ti-χW (χ=0, 5, 10 and 15 mol.%) in-situ composites by the conventional arc-casting technique, and then explored the microstructure, hardness and elastic modulus at ambient temperature and tensile properties at 1670 K. The microstructure consists of relatively fine (Nb, Mo, W, Ti)/sub 5/Si₃, silicide and a Nb solid solution matrix, and the fine eutectic microstructure becomes predominant at a Si content of around 18 mol.%. The hardness of (Nb, Mo, W, Ti(/sub 5/Si₃, silicide in a W-free sample is 1680 GPa, and goes up to 1980 GPa in a W 15 mol.% sample. The hardness, however, of Nb solid solution does not exhibit a remarkable difference when the nominal W content is increased. The elastic modulus shows a similar tendency to the hardness. The optimum tensile properties of the composites investigated are achieved at W 5 mol.% sample, which exhibits a relatively good ultimate strength of 230 MPa and an excellent balance of yield strength of 215 MPa, and an elongation of 3.7%. The SEM fractography generally indicates a ductile fracture in the W-free sample, and a cleavage rupture in W-impregnated ones.