Browse > Article

Electrical and Chemical Stability of Mo Gate Electrode for PMOS  

노영진 (한국항공대학교 전자·정보통신·컴퓨터공학부)
이충근 (한국항공대학교 전자·정보통신·컴퓨터공학)
홍신남 (한국항공대학교 전자·정보통신·컴퓨터공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.4, 2004 , pp. 23-28 More about this Journal
Abstract
In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) values were investigated after 600, 700, 800 and 90$0^{\circ}C$ RTA(Rapid Thermal Annealing). Also it was found that Mo metal gate was stable up to 90$0^{\circ}C$ with underlying SiO$_2$through X-ray diffraction measurement. Sheet resistances of Mo metal gate obtained from 4-point probe were less than 10$\Omega$/$\square$ that was much lower than those of polysilicon.
Keywords
Mo; Metal Gate; Work-function; RTA; Sheet Resistance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. Zhong, S. N. Hong, Y. S. Suh, H. Lazar, G. Heuss and V. Misra, 'Propertied of Ru-Ta alloys as gate electrodes for NMOS and PMOS silic on devices', IEDM 01, p. 467, 2001   DOI
2 J. R. Hauser et al, 'SRC working paper', 1997
3 C. H. Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Z. Yu, R. W. Dutton, 'Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS', IEEE Trans. on Electron Dev., vol. 49, no. 7, p. 1227, 2002   DOI   ScienceOn
4 T. Ushiki,K. Kawai, I. Ohshima and T. Ohmi, 'Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS device: An effect of self-sealing barrier configuration interposed between Ta and $Sio_2$', IEEE Trans. on Electron Dev., vol. 47, no. 11, p. 2201   DOI   ScienceOn
5 H. Iwai, S. I. Ohmi, 'Problems and solutions for downsizing CMOS below $0.1{\mu}m$', ICE2000 Proc., p. 1, 2000   DOI
6 R. Lin, Q. Lu, P. Ranade, T. J. King, and C. Hu, 'An adjustable work function technology using Mo gate for CMOS devies', IEEE Electron Device Lett., vol. 23, no. 1, p. 49, 2002   DOI   ScienceOn
7 V. Misra, G. P. Heuss, and H. Zhong 'Use of metal -oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO₂and ZrO2', Appl. Phys. Lett., vol. 78, no. 26, p. 4166, 2001   DOI   ScienceOn
8 Q. Lu, Y. C. Yeo, P. Ranade, H. Takeuchi, R. J. King, and C. Hu, 'Dual-metal gate technology for deep-submicron CMOS transistors', Symposium on VLSI Technology Digest of Technical Paper, p. 72, 2000   DOI
9 Y. S. Suh, G. Heuss, H. Zhong, S. N. Hong, and V. Misra, 'Electrical characteristics of TaSixNy gate electrodes', Symposium on VLSI Technology Digest of Technical Paper, p. 47, 2001   DOI
10 M. A. Pawlak, T. Schram, K. Maex, A. Vantomme, 'Investigation of Iridium as a gate electrode for deep sub-micron CMOS technology', pbulished by Elsevier B.V. 2003
11 Q. Lu, R. Lin, P. Ranade, T. J. King, C. Hu, 'Metal gate work function adjustment for future CMOS technology', Symposium on VLSI Technology Digest of Technical Paper, p. 45, 2001   DOI
12 R. Beyers, 'Thermodynamic considerations in refractory metal-silicon-oxygen systems', J. Appl. Phys. vol. 56, no. 1, p. 147, 1984   DOI   ScienceOn
13 I. Brain, 'Thermochemical data of pure substances', John Wiley and Sons, p. 1440, 1994
14 D. R. Gaskell, 'Introduction to metallurgical thermodynamics', McGraw-Hill, p. 226, 1998
15 T. S. Kalkur, Y. C. Lu, 'Thermal properties of ruthenium dioxide films', Thin Solid Films, vol. 205, p. 266, 1991   ScienceOn
16 H. Zhong, G. Heuss, and V. Misra, 'Characterization of RuO2 electrode on Zr silicate and ZrO2 dielectrics', Applied Physics Letters, vol. 78, no. 8, p. 1134, 2001   DOI   ScienceOn
17 J. E. Suarez, B. E. Johnson, and B. El-Karch, 'Thermal stability of polysilicon resistors, IEEE, p. 537, 1991   DOI