• 한국표면공학회지
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• 제44권6호
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• pp.264-268
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• 2011

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

• 한국표면공학회지
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• 제49권4호
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• pp.368-375
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• 2016

MoN-Cu thin films were prepared to achieve appropriate properties of high hardness and low friction coefficient, which could be applied to automobile engine parts for reducing energy consumption as well as solving wear problems. Composite thin films of MoN-Cu have been deposited by various processes using multiple targets such as Mo and Cu. However, those deposition with multiple targets revealed demerits such as difficulties in exact control of composition and homogeneous deposition. This study is aiming for suggesting an appropriate process to solve those problems. A single alloying target of Mo-Cu (10 at%) was prepared by powder metallurgy methods of mechanical alloying (MA) and spar plasma sintering (SPS). Thin film of MoN-Cu was then deposited by magnetron sputtering using the single alloying target of Mo-Cu (10 at%). Properties of the resulting MoN-Cu thin film were examined and compared to those of MoN-Cu thin films prepared with double targets of Mo and Cu.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.135-136
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• 2002

Molybdenum Nitrided (MoNx) films were deposited by DC planar magnetron sputtering. Silicon wafers and real nitrided stainless steel piston rings are employed as substrates. 12 different combinations of nitrogen and argon partial pressure, from 1:7 to 7:1, were applied to deposit MoNx films. X-ray diffraction (XRD) was used to determine the phase structures of films. When nitrogen vs. argon partial pressure is 1:7, the film is mainly $Mo_2N$ phase. With increase of nitrogen partial pressure, MoN phase emerges, but $Mo_2N$ phase still exists. Composition analysis with atomic emission spectrometry (AES) also agreed with this. The films have very high nanohardness (max 2400Hv) and good adhesion to the substrates.

• 한국재료학회지
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• 제29권5호
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• KSBB Journal
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• 제17권4호
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• pp.350-356
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• 2002

다양한 식품의 미생물에 의한 변패를 억제하고 저장성을 높일수 있는 포장필름을 개발하기 위하여, 미생물이 생산하는 천연 항균성 물질을 흡착시킨 silica에 항균제로서 benzoic acid 및 일본산 항균성 필름 첨가제인 JP를 공동 첨가하여 항균성 LDPE 필름을 제조하였다. 천연 항균제로는 methanol 자화 방선균 MO-16과 MO-17이 생산한 항균제를 사용하였으며, 이 물질은 121$^{\circ}C$에서 5분간 열처리시에도 항균력이 유지되는 내열성이 확인되었다. 제조한 silica LDPE 필름의 미생물생육 억제효과를 검토한 결과 조분쇄한 돈육의 경우 포장하여 실온 및 4$^{\circ}C$에서 보존시 시판필름에 비해 미생물생육억제효과가 우수하였다. 고체배지에 제조필름을 첨가하여 E. coli 에 대한 항균효과를 검토한 결과 첨가량에 따라 항균효과가 우수한 것이 입증되었다. 제조필름으로 포장한 4종류의 식품에 대한 저장성을 검토한 결과 시판필름에 비해 저장성이 우수한 것이 확인되었으며 특히 양송이 및 토마토에 대한저장효과가 우수하였다.

• 대한화학회지
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• 제63권2호
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• pp.94-101
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• 2019

Nb, Mo-doped and Nb/Mo-codoped $VO_2(M)$ nanocrystallites with various doping levels were synthesized for the first time by a hydrothermal and post thermal transformation method. The reversible phase transition characteristics of those doped $VO_2(M)$ was comparatively investigated. Nb-doping of $VO_2(M)$ by this method resulted in a very efficient lowering of the transition temperature ($T_c$) with a rate of $-16.7^{\circ}C/at.%$ that is comparable to W-doping, while Mo-doping did not give a serious reduction of $T_c$ with only a rate of $-5.1^{\circ}C/at.%$. Nb/Mo-codoping gave a similar result to Nb-doping without a noticeable difference. The thin films of Nb-doped and Nb/Mo-codoped $VO_2(M)$ with a thickness of ca. 120 nm were prepared by a wet-coating of the nanoparticle-dispersed solutions. Those films showed a good thermochromic modulation of near infrared radiation with 30-35% for Nb-doped $VO_2(M)$ and 37-40% for Nb/Mo-codoped ones. Nb/Mo-codoped $VO_2(M)$ film showed slightly enhanced thermochromic performance compared with Nb-doped $VO_2(M)$ film.

• 한국자기학회지
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• 제16권5호
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• pp.240-244
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• 2006

본 연구에서는 하지층으로 사용한 Mo(MoN)의 두께 변화에 따른 스핀밸브 구조의 자기적 특성과 열처리 결과를 비교 검토하였다. 사용된 스핀밸브는 Si기판/$SiO_2/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$ 구조이다. 또한 본 연구에서는 MoN 하지층을 Si기판에 증착하여 열처리후 특성을 분석하였다. MoN 박막의 질소량이 증가(5 sccm까지)할수록 비저항은 증가하였다. $600^{\circ}C$에서 열처리 후 측정한 XRD 결과를 보면 Si/Mo(MoN) 박막에서 규소화합물을 발견할 수 없었다. MoN을 하지층으로 사용할 경우 $300^{\circ}C$에서 열처리 후 측정한 XPS 결과를 보면 질소 유입량이 5 sccm인 경우가 질소 유입량이 1 sccm인 경우보다 안정적임을 알았다. Mo(MoN) 하지층을 사용한 경우 하지층 두께 변화($45{\AA}$)에 따라 자기저항비와 교환결합력의 변화는 소폭이었다. Mo 하지층의 열처리 온도별 자기저항비는 열처리 전 상온에서 7.0%이었고, $220^{\circ}C$ 열처리 때 7.5%로 증가하였다. 이후 열처리 온도를 $300^{\circ}C$까지 증가 시키면 자기저항비는 7.5%에서 3.5%로 감소하였고, 질소유입량이 변화(5 sccm까지)하여도 유사한 경향을 보였다.

• Nuclear Engineering and Technology
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• 제51권8호
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• pp.1983-1990
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• 2019

Spray deposited Molybdenum trioxide (MoO₃) thin film of thickness nearly 379 nm were irradiated with 200 MeV Ag¹⁵⁺ ion beam at different fluences (Ø) of 5 ×10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/㎠. The X-ray diffraction (XRD) pattern of the pristine film confirms orthorhombic structure and the crystallinity decreased after irradiation with the fluence of 5 × 10¹¹ ions/㎠ due to irradiation induced defects and became amorphous at higher fluence. In pristine film, Raman modes at 665, 820, 996 cm^-1 belong to Mo-O stretching, 286 cm^-1 belong to Mo-O bending mode and those below 200 cm^-1 are associated with lattice modes. Raman peak intensities decreased upon irradiation and vanished completely for the ion fluence of 5 ×10¹² ions/㎠. The percentage of optical transmittance of pristine film was nearly 40%, while for irradiated films it decreased significantly. Red shift was observed for both the direct and indirect band gaps. The pristine film surface had densely packed rod like structures with relatively less porosity. Surface roughness decreased significantly after irradiation. The electrical transport properties were also studied for both the pristine and irradiated films by Hall effect. The results are discussed.

• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.24-29
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• 1997

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.300-304
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• 2002

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.