Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Study on the Electrical Resistivity for Mo Back Contacts Film of CIGS Solar Cell

태양전지 CIGS용 Mo 후면전극의 전기 저항에 관한 연구

  • Kim, Gang-Sam (Korea Institute of Industrial Technology, Production Technology R&D Department, Heat Treatment and Surface Engineering R&D Group) ;
  • Cho, Yong-Ki (Korea Institute of Industrial Technology, Production Technology R&D Department, Heat Treatment and Surface Engineering R&D Group)
  • 김강삼 (한국생산기술연구원, 뿌리산업기술연구본부, 열.표면연구그룹) ;
  • 조용기 (한국생산기술연구원, 뿌리산업기술연구본부, 열.표면연구그룹)
  • Received : 2011.12.02
  • Accepted : 2011.12.30
  • Published : 2011.12.31
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Abstract

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

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References

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