Browse > Article
http://dx.doi.org/10.1016/j.net.2019.06.004

200 MeV Ag15+ ion beam irradiation induced modifications in spray deposited MoO3 thin films by fluence variation  

Rathika, R. (Department of Physics, TBML College)
Kovendhan, M. (Department of Environmental Engineering, Inha University)
Joseph, D. Paul (Department of Physics, National Institute of Technology)
Vijayarangamuthu, K. (Center for Nanoscience and Technology, Pondicherry University)
Kumar, A. Sendil (Department of Physics, KL Education Foundation)
Venkateswaran, C. (Department of Nuclear Physics, University of Madras, Guindy Campus)
Asokan, K. (Inter University Accelerator Centre)
Jeyakumar, S. Johnson (Department of Physics, TBML College)
Publication Information
Nuclear Engineering and Technology / v.51, no.8, 2019 , pp. 1983-1990 More about this Journal
Abstract
Spray deposited Molybdenum trioxide (MoO3) thin film of thickness nearly 379 nm were irradiated with 200 MeV Ag15+ ion beam at different fluences (Ø) of 5 ×1011, 1 × 1012, 5 × 1012 and 1 × 1013 ions/㎠. The X-ray diffraction (XRD) pattern of the pristine film confirms orthorhombic structure and the crystallinity decreased after irradiation with the fluence of 5 × 1011 ions/㎠ due to irradiation induced defects and became amorphous at higher fluence. In pristine film, Raman modes at 665, 820, 996 cm-1 belong to Mo-O stretching, 286 cm-1 belong to Mo-O bending mode and those below 200 cm-1 are associated with lattice modes. Raman peak intensities decreased upon irradiation and vanished completely for the ion fluence of 5 ×1012 ions/㎠. The percentage of optical transmittance of pristine film was nearly 40%, while for irradiated films it decreased significantly. Red shift was observed for both the direct and indirect band gaps. The pristine film surface had densely packed rod like structures with relatively less porosity. Surface roughness decreased significantly after irradiation. The electrical transport properties were also studied for both the pristine and irradiated films by Hall effect. The results are discussed.
Keywords
Ion beam technology; $MoO_3$ thin films; Spray coatings; Optical materials and properties; Radiation damage;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 A.L. Pergament, V.P. Malinenko, L.A. Aleshina, E.L. Kazakova, N.A. Kuldin, J. Exp. Phys. 2014 (2014), 951297, 1-6.
2 S.S. Sunu, E. Prabhu, V. Jayaraman, K.I. Gnanasekar, T.K. Seshagiri, T. Gnanasekaran, Sensor. Actuator. B 101 (2004) 161-174.   DOI
3 B.S. Lee, Y. Kim, R. Deshpande, P.A. Parilla, E. Whitney, D.T. Gillaspie, K.M. Jones, A.H. Mahan, S. Zhang, A.C. Dillon, Adv. Mater. 20 (2008) 3627-3632.   DOI
4 S.S. Mahajan, S.H. Mujawar, P.S. Shinde, A.I. Inamdar, P.S. Patil, Int. J. Electrochem. Sci. 3 (2008) 953-960.
5 G.K. Suryaman, M.W. Wildan, S. Supardjo, Y.D. Agus Susanto, Urania J. Ilm, Daur Bahan Bakar Nukl 24 (2019) 135-142.
6 B. Cheng, Y.J. Kim, P. Chou, Nucl. Eng. Technol. 48 (2016) 16-25.   DOI
7 V. Nirupama, M. Chandra Sekhar, T.K. Subramanyam, S. Uthanna, J. Phys. Conf. Ser. 208 (2010) (012101)1-(012101)6.
8 P.F. Carcia, E.M. McCarron, Thin Solid Films 155 (1987) 53-63.   DOI
9 R. Sivakumar, R. Gopalakrishnan, M. Jayachandran, C. Sanjeeviraja, Curr. Appl. Phys. 7 (2007) 51-59.   DOI
10 M. Dhanasankar, K.K. Purushothaman, G. Muralidharan, Appl. Surf. Sci. 257 (2011) 2074-2079.   DOI
11 S.D. Gothe, A.A. Wali, D.S. Sutrave, Int. J. Eng. Res. Afr. 6 (2016) 26-32.
12 A. Bouzidi, N. Benramdane, H. Tabet-Derraz, C. Mathieu, B. Khelifa, R. Desfeux, Mater. Sci. Eng. B 97 (2003) 5-8.   DOI
13 N. Chaturvedi, S.K. Swami, V. Dutta, Sol. Energy 137 (2016) 379-384.   DOI
14 B. Kannan, R. Pandeeswari, B.G. Jeyaprakash, Ceram. Int. 40 (2014) 5817-5823.   DOI
15 O. Lupan, V. Trofim, V. Cretu, I. Stamov, N.N. Syrbu, I. Tiginyanu, Y.K. Mishra, R. Adelung, J. Phys. D Appl. Phys. 47 (2014).
16 M. Kovendhan, D.P. Joseph, E.S. Kumar, A. Sendilkumar, P. Manimuthu, S. Sambasivam, C. Venkateswaran, R. Mohan, Appl. Surf. Sci. 257 (2011) 8127-8133.   DOI
17 E. Bauer, Z. Kristallogr. 110 (1958) 372-394.   DOI
18 D. Carlos, V. Lavayen, C.O. Dwyer, J. Solid State Chem. 183 (2010) 1595-1603.   DOI
19 A. Klinbumrung, T. Thongtem, S. Thongtem, J. Nanomater. 40 (2012) 1-5.
20 G. Nazri, C. Julien, Solid State Ionics 56 (1992) 376-382.
21 S.K.S. Patel, K. Dewangan, S.K. Srivastav, N.K. Verma, P. Jena, A.K. Singh, N.S. Gajbhiye, Adv. Mater. Lett. 9 (2018) 585-589.   DOI
22 A. Guru Sampath Kumar, T. Sofi Sarmash, L. Obulapathi, D. Jhansi Rani, T. Subba Rao, K. Asokan, Thin Solid Films 605 (2016) 102-107.   DOI
23 R. Kumaravel, K. Ramamurthi, I. Sulania, K. Asokan, D. Kanjilal, D.K. Avasti, P.K. Kulria, Radiat. Phys. Chem. 80 (2011) 435-439.   DOI
24 V. Naundorf, Int. J. Mod. Phys. B 6 (1992) 2925-2986.   DOI
25 A. Axelevitch, B. Gorenstein, G. Golan, Phys. Procedia 32 (2012) 1-13.   DOI
26 Y.S. Chaudhary, S.A. Khan, R. Shrivastav, Nucl. Instrum. Methods Phys. Res. B 225 (2004) 291-296.   DOI
27 H. Thakur, S. Gautam, P. Thakur, K.K. Sharma, A.P. Singh, Y. Kumar, R. Kumar, K.H. Chae, J. Korean Phys. Soc. 61 (2011) 1609-1614.   DOI
28 J.A. Venables, Introduction to Surface and Thin Film Processes, first ed., CAMBRIDGE UNIVERSITY PRESS, New York, 2003.
29 S.G. Mayr, R.S. Averback, Phys. Rev. Lett. 87 (1-4) (2001) 196106.   DOI
30 L. Mai, F. Yang, Y. Zhao, X. Xu, L. Xu, B. Hu, Y. Luo, H. Liu, Mater. Today 14 (2011) 346-353.   DOI
31 www.srim.org.
32 M. Kovendhan, D.P. Joseph, P. Manimuthu, S. Sambasivam, S.N. Karthick, K. Vijayarangamuthu, A. Sendilkuma, K. Asokan, H.J. Kim, B.C. Choi, C. Venkateswaran, R. Mohan, Appl. Surf. Sci. 284 (2013) 624-633.   DOI
33 L. Boudaoud, N. Benramdane, R. Desfeux, B. Khelifa, C. Mathieu, Catal. Today 113 (2006) 230-234.   DOI
34 M. Kovendhan, D. Paul Joseph, P. Manimuthu, A. Sendilkumar, S.N. Karthick, S. Sambasivam, K. Vijayarangamuthu, Hee Je Kim, Byung Chun Choi, K. Asokan, C. Venkateswaran, R. Mohan, Curr. Appl. Phys. 15 (2015) 622-631.   DOI
35 H. Demiryont, J.R. Sites, K. Geib, Appl. Opt. 24 (2000) 490-495.   DOI
36 P. Sharma, R. Singhal, R. Vishnoi, R. Kaushik, M.K. Banerjee, D.K. Avasthi, V. Ganesan, Vaccum 123 (2016) 35-41.   DOI
37 N. Bajwa, A. Ingale, D.K. Avasthi, R. Kumar, A. Tripathi, K. Dharamvir, V.K. Jindal, J. Appl. Phys. 104 (2008) 1-13, 054306.   DOI
38 M. Rao, K. Ravindranadh, A. Kasturi, M. Shekhawat, Res. J. Recent Sci. 2 (2013) 67-73.
39 D. Allan Bromley, Treatise on Heavy-Ion Science, Springer Berlin Heidelberg, Newyork, 1985.
40 S. Chandramohan, R. Sathyamoorthy, P. Sudhagar, D. Kanjilal, Nucl. Instrum. Methods Phys. Res. B 254 (2007) 236-242.   DOI
41 M. Kovendhan, D.P. Joseph, P. Manimuthu, S. Ganesan, S. Sambasivam, P. Maruthamuthu, S.A. Suthanthiraraj, C. Venkateswaran, R. Mohan, Trans. Indian Inst. Met. 64 (2011) 185-188.   DOI
42 V. Gokulakrishnan, S. Parthiban, E. Elangovan, K. Jeganathan, D. Kanjilal, K. Asokan, R. Martins, E. Fortunato, K. Ramamurthi, Radiat. Phys. Chem. 81 (2012) 589-593.   DOI
43 P. Sharma, M. Vashistha, I.P. Jain, Opt. Mater. 27 (2004) 395-398.   DOI
44 M.S. Kamboj, G. Kaur, R. Thangaraj, D. Avasthi, J. Phys. D Appl. Phys. 35 (2002) 477-479.   DOI
45 S. Rani, N.K. Puri, S.C. Roy, M.C. Bhatnagar, D. Kanjilal, Nucl. Instrum. Methods Phys. Res. B 266 (2008) 1987-1992.   DOI
46 N. Desai, V. Kondalkar, R. Mane, C. Hong, P. Bhosale, J. Nanomed. Nanotechnol. 6 (338) (2015) 1-7.
47 X.W. Lou, H.C. Zeng, Chem. Mater. 14 (2002) 4781-4789.   DOI
48 S. Bai, S. Chen, L. Chen, K. Zhang, R. Luo, D. Li, C. Chiun, Sensor. Actuator. B 174 (2012) 51-58.   DOI
49 H.S. Zhang, J.L. Endrino, A. Anders, Appl. Surf. Sci. 255 (2008) 2551-2556.   DOI
50 D.S. Rana, D.K. Chaturvedi, J.K. Quamara, Optoelectron. Adv. Mater. - RAPID Commun. 3 (2009) 737-743.
51 A. Berthelot, S. Hemon, F. Gourbilleau, C. Dufour, B. Domenges, Philos. Mag. A 80 (2009) 2257-2281.   DOI
52 A.E. Volkov, Nucl. Instrum. Methods Phys. Res. B 193 (2016) 381-390.   DOI
53 H. Thomas, S. Thomas, R. V Ramanujan, D.K. Avasthi, I.A.A. Omari, S. Al-harthi, M.R. Anantharaman, Nucl. Instrum. Methods Phys. Res. B 287 (2012) 85-90.   DOI
54 S. Hemon, F. Gourbilleau, E. Paumier, E. Dooryhee, Nucl. Instrum. Methods Phys. Res. B 122 (1997) 526-529.   DOI
55 D. Choi, Microelectron. Eng. 122 (2014) 5-8.   DOI
56 T. Sun, B. Yao, A.P. Warren, K. Barmak, M.F. Toney, R.E. Peale, K.R. Coffey, Phys. Rev. B 81 (2010) 1-12.
57 A.F. Mayadas, M. Shatzkes, Phys. Rev. B 1 (4) (1970) 1382-1389.   DOI
58 P.M.R. Kumar, C.S. Kartha, K.P. Vijayakumar, F. Singh, D.K. Avasthi, P.M.R. Kumar, C.S. Kartha, K.P. Vijayakumar, J. Appl. Phys. 97 (2005) (013509)1-(013509)6.   DOI
59 M. Vasilopoulou, D.G. Georgiadou, L.C. Palilis, P. Argitis, S. Kennou, L. Sygellou, N. Konofaos, A. Iliadis, I. Kostis, G. Papadimitropoulos, D. Davazoglou, Microelectron. Eng. 90 (2012) 59-61.   DOI
60 P.C. Srivastava, V. Ganesan, O.P. Sinha, Nucl. Instrum. Methods Phys. Res. B 222 (2004) 491-496.   DOI
61 S. Kumar, A.K. Mahapatro, P. Mishra, Appl. Surf. Sci. 462 (2018) 815-821.   DOI
62 T.S. Sian, G.B. Reddy, J. Appl. Phys. 98 (2005) 98-101.
63 C. Chang, J. Luo, T. Chen, K. Yeh, T. Huang, C. Hsu, W. Chao, C. Ke, P. Hsu, M. Wang, M. Wu, Thin Solid Films 519 (2010) 1552-1557.   DOI
64 J.M. Camacho, A.I. Oliva, Thin Solid Films 515 (2006) 1881-1885.   DOI
65 M.B. Rahmani, S.H. Keshmiri, J. Yu, A.Z. Sadek, L. Al-mashat, A. Moafi, K. Latham, Y.X. Li, W. Wlodarski, K. Kalantar-zadeh, Sensor. Actuator. B 145 (2010) 13-19.   DOI
66 S.A. Khalate, R.S. Kate, H.M. Pathan, R.J. Deokate, J. Solid State Electrochem. 21 (2017) 2737-2746.   DOI
67 R.S. Patil, M.D. Uplane, P.S. Patil, Int. J. Electrochem. Sci. 3 (2008) 259-265.
68 I.P. Jain, G. Agarwal, Surf. Sci. Rep. 66 (2011) 77-172.   DOI
69 R. Rathika, M. Kovendhan, D.P. Joseph, A.S. Kumar, K. Vijayarangamuthu, C. Venkateswaran, K. Asokan, S. Johnson Jeyakumar, Nucl. Instrum. Methods Phys. Res. B 439 (2019) 51-58.   DOI
70 R. Sivakumar, R. Sanjeeviraja, C. Jayachandran, M. Gopalakrishnan, S.N. Sarangi, D. Paramanik, T. Som, J. Appl. Phys. 101 (2007), 034913 (1-5).   DOI
71 P. Mallick, C. Rath, J. Prakash, D.K. Mishra, R.J. Choudhary, D.M. Phase, A. Tripathi, D.K. Avasthi, D. Kanjilal, N.C. Mishra, Nucl. Instrum. Methods Phys. Res. B 268 (2010) 1613-1617.   DOI
72 Y. Zhang, M.P.K. Sahoo, J. Wang, 19 (2017) 7032-7039.
73 P. Sudhagar, K. Asokan, J.H. Jung, Y. Lee, S. Park, Y.S. Kang, 6 (2011) 1-7.
74 R. Butte, L. Lahourcade, T.K. Uzdavinys, G. Callsen, M. Mensi, M. Glauser, G. Rossbach, D. Martin, J. Carlin, S. Marcinkevicius, N. Grandjean, M. Mensi, M. Glauser, G. Rossbach, D. Martin, Appl. Phys. Lett. 112 (2018) (032106)1-(032106)5.   DOI
75 A. Solanki, J. Shrivastava, S. Upadhyay, V. Sharma, P. Sharma, P. Kumar, P. Kumar, K. Gaskell, V.R. Satsangi, R. Shrivastav, S. Dass, Int. J. Hydrogen Energy 36 (2011) 5236-5245.   DOI
76 L. Balakrishnan, S.G. Raj, S. Meher, K. Asokan, Z. Alex, Appl. Phys. A 119 (2015) 1541-1553.   DOI
77 F.A. Mir, K.M. Batoo, Appl. Phys. A 122 (1-7) (2016) 418.   DOI
78 M. Beauvy, C. Dalmasso, C. Thiriet-dodane 242 (2006) 557-561.
79 Y.S. Chaudhary, S.A. Khan, R. Shrivastav, V.R. Satsangi, S. Prakash, U.K. Tiwari, D.K. Avasthi, N. Goswami, S. Dass, Thin Solid Films 492 (2005) 332-336.   DOI
80 P. Kumar, P. Sharma, A. Solanki, A. Tripathi, D. Deva, R. Shrivastav, S. Dass, V.R. Satsangi, Int. J. Hydrogen Energy 37 (2012) 3626-3632.   DOI