• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.541-546
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• 2006

In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.203-203
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• 2009

We report on the epitaxial growth of tetragonal $DO_{22}$-type Mn3Ga films on GaSb (001) using molecular beam epitaxy and the related structural and magnetic properties. The as-studied $Mn_3Ga$ film was found to exhibit relatively small coercivity around 400 Oe, which differs greatly from the hard magnetic properties of $Mn_3Ga$ bulk specimen or films that are normally reported. This difference was probably attributed to the effects of the GaSb (001) substrate that forced the $Mn_3Ga$ film to be two-dimensionlly stabilized in the (114) orientation and thus led to the modified intrinsic properties of $Mn_3Ga$ films. The growth orientation of the Mn3Ga (114)//GaSb (001) also caused the easy magnetocrystalline direction located in the film plane due to the dominant shape anisotropy in the thin films.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.482-485
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• 2011

$La_{0.6}Sr_{0.4}MnO_3$ (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at $800^{\circ}C$, the layer distinction against the underplayed $SiO_2$ was well preserved. However, when the annealing temperature was raised to $900^{\circ}C$, interdiffusion and interreaction occurred. Most of the $SiO_2$ and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to $950^{\circ}C$, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.437-443
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• 2019

All-solid-state thin-film lithium-ion batteries are important in the development of next-generation energy storage devices with high energy density. However, thin-film batteries have many challenges in their manufacturing procedure. This is because there are many factors, such as substrate selection, to consider when producing the thin film multilayer structure. In this study, we compare the fabrication and performance of all-solid-state thin-film lithium-ion batteries with a $LiNi_{0.5}Mn_{1.5}O_4$ cathode/LiPON solid electrolyte/$Li_4Ti_5O_{12}$ anode structure using stainless steel and Si substrates with different surface roughness. We demonstrate that the smoother the surface of the substrate, the thinner the thickness of the all-solid-state thin-film lithium-ion battery that can be made, and as a result, the corresponding electrochemical characteristics can be improved.

• 전자공학회논문지 IE
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• v.45 no.3
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• pp.1-4
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• 2008

We investigate magnetic semiconductor thin films for application towards spintronics, which can overcome current limitations in semiconductor devices. GaMnAs magnetic semiconducting films studied are easily integrated into conventional semiconductor processes and also offer a wide range of application, therefore it shows much promise as a future material. However the Curie temperature at which magnetic properties exist for GnMnAs is very low, also depending on deposition conditions the properties of the film can vary widely. In order to study these issues we investigate the best possible deposition conditions for magnetic properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.131.2-131.2
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.109-109
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• 1994

• 한국전기화학회:학술대회논문집
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• 1999.10a
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• pp.60-60
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.149-149
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• 1996